HY5N60

600V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Excellent Gate Charge: 14nC(Typ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 2 Ω(Typ.) @VGS =10V ‰ 100% Avalanche Tested HY5N60 BVDSS = 640 RDS(on) = 2 Ω ID = 5 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current (Note 2) (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 600 5 3 20 ±30 215 5 10 4.5 PD Power Dissipation (TC = 25℃) - Derate above 25℃ TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Drain current limited by maximum junction temperature 100 0.8 -55 to +150 300 Thermal Resistance Characteristics Symbol RθJC RθCS RθJA Junction-to-Case Parameter Case-to-Sink Junction-to-Ambient Typ. -0.5 -- Max. 1.25 -62.5 Units V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ Units ℃/W 1 www.hooyi-semi.com HY5N60 Electrical Characteristics TC=25 °C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics V...