RB540VM-30

Schottky Barrier Diode RB540VM-30 Data Sheet lApplication General rectification lDimensions (Unit : mm) 1.25±0.1 (1) 0.1±0.1 　　　 0.05 lLand Size Figure (Unit : mm) 0.9 1.7±0.1 2.5±0.2 0.8 2.1 lFeatures 1) Ultra small mold type (UMD2) 2) High reliability 3) Low VF lConstruction Silicon epitaxial planar type (2) 0.3±0.05 0.7±0.2 　　　 0.1 ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-90/A : Manufacture date lTaping Dimensions (Unit : mm) 4.0±0.1 2.0±0.05 fφ1.15.55±0.005.05 UMD2 lStructure (1) Cathode (2) Anode 0.3±0.1 3.5±0.05 1.75±0.1 2.75 8.0±0.2 2.8±0.1 1.40±0.1 lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol 4.0±0.1 fφ1.10.055 Conditions 1.0±0.1 Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 30 V Reverse voltage VR Direct reverse voltage Average forward rectified current Non-repetitive forward current surge peak Io IFSM Glass epoxy board mounted, 60Hz half sin wave, resistive load 60Hz half sin wave, Non-repetitive at Ta=25ºC , 1cycle Operating junction temperature Tj - 30 200 1000 150 V mA mA °C Storage temperature Tstg - -55 to +150 °C lElectrical Characteristics (Tj= 25°C) Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage Reverse current VF IF=10mA - - 0.45 V IR VR=10V - - 0.5 mA www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/5 2015.01 - Rev.A RB540VM-30 lElectrical Characteristic Curves Data Sheet FORWARD CURRENT : IF(mA) 1000 100 Tj = 150°C Tj = 125°C 10 Tj = 75°C 1 Tj = 25°...