Document
Schottky Barrier Diode
RB501SM-30
Data Sheet
lApplication General rectification
lDimensions (Unit : mm)
0.8±0.05
0.12±0.05
(1)
lLand Size Figure (Unit : mm)
0.8
1.2±0.05 1.6±0.1 0.6 1.7
lFeatures 1) Ultra small mold type
(EMD2) 2) High reliability 3) Super low VF
lConstruction Silicon epitaxial planar type
(2)
0.3±0.05
0.6±0.1
ROHM : EMD2 JEDEC : SOD-523 JEITA : SC-79
: Year, week and factory
lTaping Dimensions (Unit : mm)
4.0±0.1
2.0±0.05
φ 1.5±0.05 f1.50.05
EMD2
lStructure (1) Cathode
(2) Anode
0.2±0.05
1.75±0.1
0.6 3.5±0.05 8.0±0.15
1.26±0.05 0
2.45±0.1 1.3±0.06
0
0.95±0.06 0
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Emポpケtyッpトocket 4.0±0.1
Conditions
2.0±0.05
fφ0.05.5
0.2 0.76±0.05
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
30 V
Reverse voltage
VR Direct reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Io IFSM
Glass epoxy board mounted, 60Hz half sin wave, resistive load
60Hz half sin wave, Non-repetitive at Ta=25ºC , 1cycle
Operating junction temperature
Tj
-
30 100 1000 125
V mA mA °C
Storage temperature
Tstg
- -55 to +125 °C
lElectrical Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
VF IF=10mA - - 0.35 V
Reverse current
IR
VR=10V
- - 10 mA
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1/5
2015.01 - Rev.A
RB501SM-30 lElectrical Characteristic Curves
Data Sheet
FORWARD CURRENT : IF(mA)
1000
100 Tj = 125°C 10 1 0.1
Tj = 75°C Tj = 25°C Tj = -25°C
0.01 0
100 200 300 400 500 600
FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS
REVERSE CURRENT : IR(mA)
10000
1000 100 10
Tj = 125°C Tj = 75°C
1 Tj = 25°C
0.1
0.01 0
Tj = -25°C
10 20
REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS
30
CAPACITANCE BETWEEN TERMINALS : Ct(pF)
FORWARD VOLTAGE : VF(mV)
100 300
Tj = 25°C f = 1MHz
295 290
Tj=25°C IF=10mA n=30pcs
285
10 280 Ave. : 270.2mV
275
270
265
1 0 5 10 15 20
260
REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS
VF DISPERSION MAP
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2/5
2015.01 - Rev.A
REVERSE CURRENT : IR(mA)
RB501SM-30
lElectrical Characteristic Curves
40 Tj=25°C
35 VR=10V n=30pcs
30 25 20 15 10 Ave. : 2.4mA
5 0
IR DISPERSION MAP
CAPACITANCE BETWEEN TERMINALS : Ct(pF)
Data Sheet
50 45 Tj=25°C
f=1MHz 40 VR=0V
n=10pcs 35 30 25 Ave. : 17pF 20 15 10
Ct DISPERSION MAP
PEAK SURGE FORWARD CURRENT : IFSM(A)
40
35
IFSM 1cyc
30
8.3ms Ta=25°C
25
20
15 10 Ave. : 3.9A
5
0
IFSM DISPERSION MAP
REVERSE RECOVERY TIME : trr(ns)
45
40
Tj=25°C IF=0.1A
35 IR=0.1A
Irr / IR=0.10
30 n=10pcs
25
20
Ave. : 13.2ns 15
10
5
0
trr DISPERSION MAP
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3/5
2015.01 - Rev.A
RB501SM-30 lElectrical Characteristic Curves
10 10
IFSM
8.3 8.3 ms ms
1cyc
Ta=25°C
Data Sheet
IFSM time
1cyc
Ta=25°C
PEAK SURGE FORWARD CURRENT : IFSM(A)
PEAK SURGE FORWARD CURRENT : IFSM(A)
FORWARD POWER DISSIPATION : PF (W)
1 1 10 100
NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS
1 1 10 100
TIME : t(ms) IFSM-t CHARACTERISTICS
0.10 0.08
Tj = 125°C
0.06 D = 1/2
Sin(θ=180) 0.04
DC 0.02
0.00 0
50 100 150
AVERAGE RECTIFIED FORWARD CURRENT : Io(mA)
Io-PF CHARACTERISTICS
200
REVERSE POWER DISSIPATION : PR (W)
0.15
Tj = 125°C
0.10
Sin(θ=180) 0.05 D = 1/2
DC
0.00 0
10 20
REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS
30
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4/5
2015.01 - Rev.A
RB501SM-30 lElectrical Characteristic Curves
Data Sheet
TRANSIENT THERMAL IMPEDANCE : Rth (°C/W)
1000
Rth(j-a)
100
Rth(j-c)
Glass epoxy board mounted
IM=100mA
IF=0.2A
time
10 0.001 0.01 0.1
1ms300ms
1 10 100 1000
TIME : t(s) Rth-t CHARACTERISTICS
AVERAGE RECTIFIED FORWARD CURRENT : Io(mA)
300 250 200 150
IO 0A 0V VR t
T
DC
D = 1/2
D=t/T
VR=VRM/2 Tj=125°C
100 50 Sin(θ=180)
0 0 25 50 75 100 125
AMBIENT TEMPERATURE : Ta(°C) DERATING CURVE (Io-Ta)
AVERAGE RECTIFIED FORWARD CURRENT : Io(mA)
300 250 200 150
DC D = 1/2
IO 0A 0V
VR t T
D=t/T
VR=VRM/2 Tj=125°C
100
50 Sin(θ=180)
0 0 25 50 75 100 125
CASE TEMPERATURE : Tc(°C) DERATING CURVE (Io-Tc)
ELECTROSTATIC DISCHARGE TEST : ESD(kV)
30
25
20
15 AVE. : 9.5kV
10
AVE. : 2.8kV 5
0 C=200pF R=0W
C=100pF R=1.5kW
ESD DISPERSION MAP
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5/5
2015.01 - Rev.A
Notice
Notes
1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions : 3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail.