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RB501SM-30 Dataheets PDF



Part Number RB501SM-30
Manufacturers Rohm
Logo Rohm
Description Schottky Barrier Diode
Datasheet RB501SM-30 DatasheetRB501SM-30 Datasheet (PDF)

Schottky Barrier Diode RB501SM-30 Data Sheet lApplication General rectification lDimensions (Unit : mm) 0.8±0.05 0.12±0.05 (1) lLand Size Figure (Unit : mm) 0.8 1.2±0.05 1.6±0.1 0.6 1.7 lFeatures 1) Ultra small mold type (EMD2) 2) High reliability 3) Super low VF lConstruction Silicon epitaxial planar type (2) 0.3±0.05 0.6±0.1 ROHM : EMD2 JEDEC : SOD-523 JEITA : SC-79 : Year, week and factory lTaping Dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ 1.5±0.05 f1.50.05 EMD2 lStructure .

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Schottky Barrier Diode RB501SM-30 Data Sheet lApplication General rectification lDimensions (Unit : mm) 0.8±0.05 0.12±0.05 (1) lLand Size Figure (Unit : mm) 0.8 1.2±0.05 1.6±0.1 0.6 1.7 lFeatures 1) Ultra small mold type (EMD2) 2) High reliability 3) Super low VF lConstruction Silicon epitaxial planar type (2) 0.3±0.05 0.6±0.1 ROHM : EMD2 JEDEC : SOD-523 JEITA : SC-79 : Year, week and factory lTaping Dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ 1.5±0.05 f1.50.05 EMD2 lStructure (1) Cathode (2) Anode 0.2±0.05 1.75±0.1 0.6 3.5±0.05 8.0±0.15 1.26±0.05 0 2.45±0.1 1.3±0.06 0 0.95±0.06 0 lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Emポpケtyッpトocket 4.0±0.1 Conditions 2.0±0.05 fφ0.05.5 0.2 0.76±0.05 Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 30 V Reverse voltage VR Direct reverse voltage Average forward rectified current Non-repetitive forward current surge peak Io IFSM Glass epoxy board mounted, 60Hz half sin wave, resistive load 60Hz half sin wave, Non-repetitive at Ta=25ºC , 1cycle Operating junction temperature Tj - 30 100 1000 125 V mA mA °C Storage temperature Tstg - -55 to +125 °C lElectrical Characteristics (Tj= 25°C) Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage VF IF=10mA - - 0.35 V Reverse current IR VR=10V - - 10 mA www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/5 2015.01 - Rev.A RB501SM-30 lElectrical Characteristic Curves Data Sheet FORWARD CURRENT : IF(mA) 1000 100 Tj = 125°C 10 1 0.1 Tj = 75°C Tj = 25°C Tj = -25°C 0.01 0 100 200 300 400 500 600 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS REVERSE CURRENT : IR(mA) 10000 1000 100 10 Tj = 125°C Tj = 75°C 1 Tj = 25°C 0.1 0.01 0 Tj = -25°C 10 20 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 30 CAPACITANCE BETWEEN TERMINALS : Ct(pF) FORWARD VOLTAGE : VF(mV) 100 300 Tj = 25°C f = 1MHz 295 290 Tj=25°C IF=10mA n=30pcs 285 10 280 Ave. : 270.2mV 275 270 265 1 0 5 10 15 20 260 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 2/5 2015.01 - Rev.A REVERSE CURRENT : IR(mA) RB501SM-30 lElectrical Characteristic Curves 40 Tj=25°C 35 VR=10V n=30pcs 30 25 20 15 10 Ave. : 2.4mA 5 0 IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS : Ct(pF) Data Sheet 50 45 Tj=25°C f=1MHz 40 VR=0V n=10pcs 35 30 25 Ave. : 17pF 20 15 10 Ct DISPERSION MAP PEAK SURGE FORWARD CURRENT : IFSM(A) 40 35 IFSM 1cyc 30 8.3ms Ta=25°C 25 20 15 10 Ave. : 3.9A 5 0 IFSM DISPERSION MAP REVERSE RECOVERY TIME : trr(ns) 45 40 Tj=25°C IF=0.1A 35 IR=0.1A Irr / IR=0.10 30 n=10pcs 25 20 Ave. : 13.2ns 15 10 5 0 trr DISPERSION MAP www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 3/5 2015.01 - Rev.A RB501SM-30 lElectrical Characteristic Curves 10 10 IFSM 8.3 8.3 ms ms 1cyc Ta=25°C Data Sheet IFSM time 1cyc Ta=25°C PEAK SURGE FORWARD CURRENT : IFSM(A) PEAK SURGE FORWARD CURRENT : IFSM(A) FORWARD POWER DISSIPATION : PF (W) 1 1 10 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 1 1 10 100 TIME : t(ms) IFSM-t CHARACTERISTICS 0.10 0.08 Tj = 125°C 0.06 D = 1/2 Sin(θ=180) 0.04 DC 0.02 0.00 0 50 100 150 AVERAGE RECTIFIED FORWARD CURRENT : Io(mA) Io-PF CHARACTERISTICS 200 REVERSE POWER DISSIPATION : PR (W) 0.15 Tj = 125°C 0.10 Sin(θ=180) 0.05 D = 1/2 DC 0.00 0 10 20 REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS 30 www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 4/5 2015.01 - Rev.A RB501SM-30 lElectrical Characteristic Curves Data Sheet TRANSIENT THERMAL IMPEDANCE : Rth (°C/W) 1000 Rth(j-a) 100 Rth(j-c) Glass epoxy board mounted IM=100mA IF=0.2A time 10 0.001 0.01 0.1 1ms300ms 1 10 100 1000 TIME : t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT : Io(mA) 300 250 200 150 IO 0A 0V VR t T DC D = 1/2 D=t/T VR=VRM/2 Tj=125°C 100 50 Sin(θ=180) 0 0 25 50 75 100 125 AMBIENT TEMPERATURE : Ta(°C) DERATING CURVE (Io-Ta) AVERAGE RECTIFIED FORWARD CURRENT : Io(mA) 300 250 200 150 DC D = 1/2 IO 0A 0V VR t T D=t/T VR=VRM/2 Tj=125°C 100 50 Sin(θ=180) 0 0 25 50 75 100 125 CASE TEMPERATURE : Tc(°C) DERATING CURVE (Io-Tc) ELECTROSTATIC DISCHARGE TEST : ESD(kV) 30 25 20 15 AVE. : 9.5kV 10 AVE. : 2.8kV 5 0 C=200pF R=0W C=100pF R=1.5kW ESD DISPERSION MAP www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 5/5 2015.01 - Rev.A Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifica- tions : 3) Although ROHM is continuously working to improve product reliability and quality, semicon- ductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail.


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