RB088T100

Schottky Barrier Diode RB088T100 Data Sheet lApplication Switching power supply lFeatures 1) Cathode common type 2) High reliability 3) Super low IR lConstruction Silicon epitaxial planar type lDimensions (Unit : mm) 4.5±00..31 10.0± 0.3 0.1 f3.2±0.2 2.8±00..21 lStructure 0.4 0.2 15.0± 12.0±0.2 1 1.2 1.3 0.8 2.45±0.5 2.45±0.5 (1) (2) (3) 5.0±0.2 8.0±0.2 14.0±0.5 2.6±0.5 0.75±00..015 ROHM : TO220FN 1 : Manufacture Date (1) (2) (3) Anode Cathode Anode lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 110 V Reverse voltage VR Direct reverse voltage Average forward rectified current Non-repetitive forward current surge peak Io IFSM Glass epoxy board mounted, 60Hz half sin wave, resistive load, IO/2 per diode, Tc=137ºC Max. 60Hz half sin wave, Non-repetitive at Ta=25ºC, 1cycle, per diode Operating junction temperature Tj - 100 10 100 150 V A A °C Storage temperature Tstg - -55 to +150 °C lElectrical and Thermal Characteristics (Tj= 25°C) Parameter Symbol Conditions Forward voltage VF IF=5A Reverse current IR VR=100V Thermal resistance Rth(j-c) Junction to case Min. Typ. Max. Unit - - 0.87 V - - 5 mA - - 2 °C / W www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/5 2015.01 - Rev.A RB088T100 lElectrical Characteristic Curves Data Sheet FORWARD CURRENT : IF(A) 100 Tj = 150°C 10 Tj = 125°C 1 Tj = 75°C 0.1 Tj = 25°C 0.01 Tj = -25°C 0.001 0 200 400 ...