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CS7N60FA9HD

Huajing Discrete Devices
Part Number CS7N60FA9HD
Manufacturer Huajing Discrete Devices
Description Silicon N-Channel Power MOSFET
Published Jun 30, 2015
Detailed Description Huajing Discrete Devices Silicon N-Channel Power MOSFET ○R CS7N60FA9HD General Description： CS7N60FA9HD, the silicon ...
Datasheet PDF File CS7N60FA9HD PDF File

CS7N60FA9HD
CS7N60FA9HD

Overview
Huajing Discrete Devices Silicon N-Channel Power MOSFET ○R CS7N60FA9HD General Description： CS7N60FA9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-220F, which accords with the RoHS standard.
Features： z Fast Switching z ESD Improved Capability z Low Gate Charge (Typical Data:21nC) z Low Reverse transfer capacitances(Typical:15pF) z 100% Single Pulse avalanche energy Test Applications： Power switch c...


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