W4N150

STFW4N150 STP4N150, STW4N150 N-channel 1500 V, 5 Ω, 4 A, PowerMESH™ Power MOSFET in TO-220, TO-247, TO-3PF Features Type VDSS RDS(on) max ID Pw STFW4N150 1500 V <7Ω 4 A 63 W STP4N150 1500 V <7Ω 4 A 160 W STW4N150 1500 V <7Ω 4 A 160 W ■ 100% avalanche tested ■ Intrinsic capacitances and Qg minimized ■ High speed switching ■ Fully isolated TO-3PF plastic packages ■ Creepage distance path is 5.4 mm (typ.) for TO-3PF Application ■ Switching applications Description Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. Table 1. Device summary Order codes STFW4N150 STP4N150 STW4N150 Marking 4N150 P4N150 W4N150 3 2 1 TO-220 3 2 1 TO-247 3 2 1 TO-3PF Figure 1. Internal schematic diagram. $ ' 3 !-V Package TO-3PF TO-220 TO-247 Packaging Tube Tube Tube July 2009 Doc ID 11262 Rev 9 1/15 www.st.com 15 Contents Contents STFW4N150, STP4N150, STW4N150 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . ...