STP5N120

STP5N120 N-channel 1200 V, 2.7 Ω, 4.7 A TO-220 Zener-protected SuperMESH™ Power MOSFET Features Type VDSS RDS(on) ID PW STP5N120 1200 V < 3.5 Ω 4.7 A 160 W t(s)■ 100% avalanche tested ■ Extremely high dv/dt capability uc■ ESD improved capability rod■ New high voltage benchmark ■ Gate charge minimized lete PApplication o■ Switching applications ObsDescription ) -The SuperMESH™ series is obtained through an t(sextreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to ucpushing on-resistance significantly down, special dcare is taken to ensure a very good dv/dt rocapability for the most demanding applications. PSuch series complements ST full range of high Obsoletevoltage Power MOSFETs. 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order code STP5N120 Marking 5N120 Package TO-220 Packaging Tube November 2009 Doc ID 13530 Rev 2 1/12 www.st.com 12 Contents Contents STP5N120 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 )4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Obsole...