FW307

Ordering number : ENN7274 FW307 N-Channel and P-Channel Silicon MOSFETs FW307 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions The FW307 incorporates an N-channel MOSFET and a unit : mm P-channel MOSFET that feature low ON-resistance and 2129 high-speed switching, thereby enabling high-density mounting. 8 Excellent ON-resistance characteristic. [FW307] 5 0.3 4.4 6.0 5.0 1.5 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg 0.595 1.27 0.43 0.1 1.8max 1 4 0.2 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 Conditions Ratings N-channel 250 ±30 1 P-channel --250 ±30 --0.7 --3 1.7 2.0 150 --55 to +150 Unit V V A A W W °C °C PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)1unit Mounted on a ceramic board (900mm2!0.8mm) 5 Electrical Characteristics at Ta=25°C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Gate-to-Source Leakage Current V(BR)DSS IDSS IDSS IGSS IGSS ID=1mA, VGS=0 VDS=250V, VGS=0 VDS=15V, VGS=0, Ta=0 to 60°C VGS=±25V, VDS=0 VGS=±15V, VDS=0, Ta=0 to 60°C 250 100 4 ±10 ±1.2 V µA µA µA µA Symbol Conditions Ratings min typ max ...