FW306

FW306 N- Channel Silicon MOS FET High Speed Switching TENTATIVE Features High density mounting is possible because of the complex type which holds low-on-resistance, very-high-speed-switching and 4-volt-drive N- / P- channel / MOSFETs. Low ON-state resistance. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissipation Total Dissipation Channel Temperature Storage Temperature Electrical Characteristics / Ta=25°C (N-channel) Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage VDSS VGSS ID IDP PD PT Tch Tstg N-channel 30 ±25 5 32 1.7 2.0 150 --55 to ±150 min V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) 1 RDS(on) 2 Ciss Coss Crss td(on) tr td(off) tf VSD ID=1mA VDS=30V VGS=±20V VDS=10V VDS=10V ID=5A ID=2A VDS=10V VDS=10V VDS=10V , , , , , , , , , , VGS=0 VGS=0 VDS=0 ID=1mA ID=5A VGS=10V VGS=4V f=1MHz f=1MHz f=1MHz 30 100 ±10 2.5 8 50 84 460 340 85 13 300 30 50 1.0 65 120 typ max P-channel 30 ±25 --3 --32 unit V V A A W W °C °C unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns V PW≤10µS, dutycycle≤1% Mounted on ceramic board (1000mm2 ! 0.8mm) 1unit Mounted on ceramic board (1000mm2 ! 0.8mm) 1.0 5 See Specified Test Circ...