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FW245 Dataheets PDF



Part Number FW245
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description DC / DC Converter Applications
Datasheet FW245 DatasheetFW245 Datasheet (PDF)

Ordering number : ENN7133 FW245 N-Channel Silicon MOSFET FW245 DC / DC Converter Applications Features • • • Package Dimensions unit : mm 2129 [FW245] 8 5 0.3 4.4 6.0 Low ON-resistance. 4V drive. Ultrahigh-speed switching. 5.0 1.5 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD P.

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Ordering number : ENN7133 FW245 N-Channel Silicon MOSFET FW245 DC / DC Converter Applications Features • • • Package Dimensions unit : mm 2129 [FW245] 8 5 0.3 4.4 6.0 Low ON-resistance. 4V drive. Ultrahigh-speed switching. 5.0 1.5 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg 0.595 1.27 0.43 0.1 1.8max 1 4 0.2 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 Conditions Ratings 30 ±20 7 Unit V V A A W W °C °C PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm 2!0.8mm) 1unit Mounted on a ceramic board (1200mm2!0.8mm) 52 1.7 2.0 150 --55 to +150 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=7A ID=7A, VGS=10V ID=4A, VGS=4.5V Ratings min 30 1 ±10 1.0 7 10 26 39 34 55 2.4 typ max Unit V µA µA V S mΩ mΩ Marking : W245 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 11502 TS IM TA-2608 No.7133-1/4 FW245 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=7A VDS=10V, VGS=10V, ID=7A VDS=10V, VGS=10V, ID=7A IS=7A, VGS=0 Ratings min typ 550 170 90 9 73 41 54 10 1.5 1.0 0.82 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VDD=15V 10V 0V VIN ID=7A RL=2.1Ω VOUT Electrical Connection D1 D1 D2 D2 PW=10µs D.C.≤1% VIN D G P.G 50Ω Top view S FW245 S1 G1 S2 G2 10 ID -- VDS 10.0V 6.0V 10 9 8 ID -- VGS VDS=10V 9 8 8.0V 4.5 V Drain Current, ID -- A 5V Drain Current, ID -- A 7 6 5 4 3 2 1 0 0 0.1 0.2 0.3 3.0 V 7 6 5 4 3. 2 1 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.5 1.0 1.5 Ta= 7 2.0 VGS=2.5V 3 25° 2.5 3.0 C 5°C --25°C 3.5 4.0 Drain-to-Source Voltage, VDS -- V 60 IT00557 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 60 IT00558 RDS(on) -- Ta =4. GS A, V 5V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 55 50 45 40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 16 Ta=25°C 50 ID=7.0A 4.0A 40 4. I D= 0 30 I D= , VG 7.0A 10. S= 0V 20 10 18 20 0 --50 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V IT04012 Ambient Temperature, Ta -- °C IT04013 No.7133-2/4 FW245 Forward Transfer Admittance, yfs -- S 100 7 5 3 yfs -- ID VDS=10V 10 7 5 3 2 IF -- VSD VGS=0 Forward Current, IF -- A 2 10 7 5 3 2 1.0 7 5 3 2 0.1 0.1 2 3 5 7 1.0 2 3 5 10 IT00561 7 C 25° °C --25 Ta= 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.3 75°C Ta=7 5°C 25°C 0.5 0.001 0.2 0.4 0.6 --25° C 0.7 0.8 0.9 1.0 1.1 1.2 1000 7 5 Ciss, Coss, Crss -- VDS f=1MHz Drain Current, ID -- A Diode Forward Voltage, VSD -- V 10 9 IT00562 VGS -- Qg Ciss Gate-to-Source Voltage, VGS -- V VDS=10V ID=7.0A 8 7 6 5 4 3 2 1 Ciss, Coss, Crss -- pF 3 2 Coss Crss 100 7 5 3 2 10 0 5 10 15 20 25 30 IT00563 0 0 1 2 3 4 5 6 7 8 9 10 Drain-to-Source Voltage, VDS -- V 1000 7 5 Total Gate Charge, Qg -- nC 100 7 5 3 2 IT04014 SW Time -- ID ASO IDP=52A 10 VDD=15V VGS=10V Drain Current, ID -- A <10µs 1m s Switching Time, SW Time -- ns 3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.1 2 100µs td(off) 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ID=7A 10 ms DC 0m s .


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