Document
Ordering number:ENN6391
N-Channel Silicon MOSFET
FW233
Load Switching Applications
Features
· Low ON resistance. · 4V drive.
Package Dimensions
unit:mm 2129
[FW233]
8 5 0.3 4.4 6.0 0.2 5.0 1.5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg
0.595
1.27
0.43
Conditions
0.1
1.8max
1
4
1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8
Ratings 30 ±20 8
Unit V V A A W W
˚C ˚C
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm)
52 1.7 2.0 150 –55 to +150
Electrical Characteristics at Ta = 25˚C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=8A ID=8A, VGS=10V ID=4A, VGS=4V Conditions Ratings min 30 1 ±10 1.0 9.8 14 16 24 21 34 2.4 typ max Unit V µA µA V S mΩ mΩ
Marking : W233
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
60100TS (KOTO) TA-2661 No.6391-1/4
FW233
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=8A VDS=10V, VGS=10V, ID=8A VDS=10V, VGS=10V, ID=8A IS=8A, VGS=0 Conditions Ratings min typ 1550 350 220 12 210 110 95 40 5 7 0.82 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V
Electrical Connection
D1 D1 D2 D2
Switching Time Test Circuit
VDD=15V Vin 10V 0V Vin PW=10µs D.C.≤1% ID=8A RL=1.87W
D
VOUT
G
S1 G1 S2 G2 (Top view)
P.G 50W
FW233
S
15
ID -- VDS
V 10.0
16 14 12 10 8 6 4 2 0
ID -- VGS
VDS=10V
3.5
V
3.0 V
Drain Current, ID – A
6.0
V
12
2.5V
9
6
Drain Current, ID – A
4.0 V
Ta= 7
VGS=2.0V
0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0
0.5
1.0
1.5
--25 °C
2.5
3
25°C
3.0 IT00722 100 120 140 160 IT00724
Drain-to-Source Voltage, VDS – V
60
IT00721
Gate-to-Source Voltage, VGS – V
40 35
RDS(on) -- VGS
Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) – mΩ
RDS(on) -- Ta
Static Drain-to-Source On-State Resistance, RDS(on) – mΩ
50
30 25 20 15 10 5 0 --60
40
8A
30
4A I D=
=4V , VGS
=10V VGS
ID=4A
A, I D=8
20
10
0 0
2
4
6
8
10
12
14
16
18
20
--40
--20
0
20
40
60
80
Gate-to-Source Voltage, VGS – V
IT00723
Ambient Temperature, Ta – ˚C
5°C
2.0
No.6391-2/4
FW233
Forward Transfer Admittance, | yfs | – S
100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
yfs -- ID
VDS=10V
5 -- 2 °C
100 7 5 3 2
IF -- VSD
VGS=0
°C 75
Forward Current, IF – A
Ta=
Ta= 75° C
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
25
°C
0.01 0.001 2 3 5 70.01 2 3 5 70.1 2 3 5 71.0 2 3 5 7 10 2 3 5 7 100 Drain Current, ID – A IT00725 10000 7 5
0.01 7 5 3 2 0.001 0.2
C --25 °C
0.5 0.7
25 °
0.3
0.4
0.6
0.8
0.9
1.0
1.1
1.2
Diode Forward Voltage, VSD – V
10 9
IT00726
Ciss, Coss, Crss -- VDS
f=1MHz Gate-to-Source Voltage, VGS – V
VGS -- Qg
VDS=10V ID=8A
8 7 6 5 4 3 2 1
Ciss, Coss, Crss – pF
3 2
Ciss
1000 7 5 3 2
Coss
Crss
100 0
0 5 10 15 20 25 30 IT00727 100 7 5 3 2 0 5 10 15 20 25 30 35 40
Drain-to-Source Voltage, VDS – V
Total Gate Charge, Qg – nC
IT00728
1000 7 5
SW Time -- ID
VDD=15V VGS=10V Drain Current, ID – A td(off) tf
ASO
IDP=52A ID=8A <10µs 1 1m 00µ s s 10 ms 10 0m s
Switching Time, SW Time – ns
3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.1 2 3 5 7
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
DC
op
era
td(on) tr
Operation in .