P-Channel Silicon MOS FET
Ordering number :EN5847
P-Channel Silicon MOS FET
FW113
S/W Load Applications
Features
· 4V drive. · Low ON resistance...
Description
Ordering number :EN5847
P-Channel Silicon MOS FET
FW113
S/W Load Applications
Features
· 4V drive. · Low ON resistance.
Package Dimensions
unit:mm 2129
[FW113] 85
0.1 1.5 1.8max 4.4 0.3 6.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
1 5.0
4
0.595 1.27 0.43
1:Source1 2:Gate1 3:Source2 4:Gate2 0.2 5:Drain2 6:Drain2 7:Drain1 8:Drain1
SANYO:SOP8
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS
ID IDP PD PT Tch
Tstg
Conditions
PW≤10µs, duty cycle≤1% Mounted on ceramic board (1000mm2×0.8mm) 1unit Mounted on ceramic board (1000mm2×0.8mm)
Ratings –30 ±20 –5 –32 1.7 2.0 150
–55 to +150
Unit V V A A W W ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
D-S Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Current Forward Transfer Admittance Static Drain-to-Source ON-State Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Diode Forward Voltage
Symbol
Conditions
V(BR)DSS IDSS IGSS
VGS(off) | yfs |
RDS(on)1 RDS(on)2
Ciss
Coss
Crss
td(on) tr
td(off) tf Qg
Qgs
Qgd
VSD
ID=–1mA, VGS=0 VDS=–30V, VGS=0 VGS=±16V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–5A ID=–5A, VGS=–10V ID=–2A, VGS=–4V VDS=–10V, f=1MHz VDS=–10V, f=1MHz...
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