STP260N6F6

STI260N6F6 STP260N6F6 N-channel 60 V, 0.0024 Ω, 120 A STripFET™ VI DeepGATE™ Power MOSFET in TO-220 and I²PAK packages Features Order codes STI260N6F6 STP260N6F6 VDSS 60 V RDS(on) max ID < 0.003 Ω 120 A ■ Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness Application ■ Switching applications Description These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. TAB TAB 123 I²PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram $4!" ' 3 !-V Table 1. Device summary Order codes STI260N6F6 STP260N6F6 Marking 260N6F6 Package I²PAK TO-220 Packaging Tube January 2012 Doc ID 17467 Rev 5 1/14 www.st.com 14 Contents Contents STI260N6F6, STP260N6F6 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2...