2SK1697

2SK1697 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source. Suitable for DC – DC converter, motor drive, power switch, solenoid drive REJ03G1373-0200 (Previous: ADE-208-1313) Rev.2.00 May 11, 2006 Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 21 3 4 Note: Marking is “EY”. D G S 1. Gate 2. Drain 3. Source 4. Drain *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current Drain peak current ID ID(pulse)*1 Body to drain diode reverse drain current Channel dissipation IDR Pch*2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the alumina ceramic board (12.5 × 20 × 0.7 mm) Ratings 60 ±20 0.5 1.5 0.5 1 150 –55 to +150 (Ta = 25°C) Unit V V A A A W °C °C Rev.2.00 May 11, 2006 page 1 of 6 2SK1697 Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery ti...