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D1998 Dataheets PDF



Part Number D1998
Manufacturers Sanyo
Logo Sanyo
Description PNP / NPN Epitaxial Planar Silicon Transistors
Datasheet D1998 DatasheetD1998 Datasheet (PDF)

Ordering number : EN3130A 2SB1324 / 2SD1998 SANYO Semiconductors DATA SHEET 2SB1324 / 2SD1998 PNP / NPN Epitaxial Planar Silicon Transistors Compact Motor Driver Applications Features • Low saturation voltage. • Contains diode between collector and emitter. • Contains bias resistance between collector and emitter. • Large current capacity. • Small-sized package making it easy to provide high-density, small-sized hybrid ICs. Specifications ( ) : 2SB1324 Absolute Maximum Ratings at Ta=25°C Pa.

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Ordering number : EN3130A 2SB1324 / 2SD1998 SANYO Semiconductors DATA SHEET 2SB1324 / 2SD1998 PNP / NPN Epitaxial Planar Silicon Transistors Compact Motor Driver Applications Features • Low saturation voltage. • Contains diode between collector and emitter. • Contains bias resistance between collector and emitter. • Large current capacity. • Small-sized package making it easy to provide high-density, small-sized hybrid ICs. Specifications ( ) : 2SB1324 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Mounted on a ceramic board (250mm2✕0.8mm) Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current DC Current Gain Marking 2SB1324 : BL 2SD1998 : DM Symbol ICBO hFE1 hFE2 Conditions VCB=(--)30V, IE=0A VCE=(--)2V, IC=(--)0.5A VCE=(--)2V, IC=(--)2A Ratings (--)40 (--)30 (--)6 (--)3 (--)5 1.5 150 --55 to +150 Unit V V V A A W °C °C min 75 50 Ratings typ max (--)1.0 Unit μA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. www.semiconductor-sanyo.com/network 31710EA TK IM / 41504TN (PC)/O1598HA (KT)/6089MO, TS No.3130-1/4 2SB1324 / 2SD1998 Continued from preceding page. Parameter Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Diode Forwad Voltage Base-to-Emitter Resistance Symbol Conditions fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO1 V(BR)CEO2 VF RBE VCE=(--)2V, IC=(--)0.5A VCB=(--)10V, f=1MHz IC=(--)2A, IB=(--)100mA IC=(--)2A, IB=(--)100mA IC=(--)10μA, IE=0A IC=(--)10μA, RBE=∞ IC=(--)10μA, RBE=∞ IF=0.5A Ratings min typ 100 (55)40 (--0.25)0.2 (--)40 (--)40 (--)30 0.8 max (--0.6)0.5 (--)1.5 1.5 Unit MHz pF V V V V V V kΩ Package Dimensions unit : mm (typ) 7007B-004 Electrical Connection Collector Collector Base RBE Emitter PNP Base RBE Emitter NPN DC Current Gain, hFE DC Current Gain, hFE 5 2SB1324 3 2 hFE -- IC 100 7 5 Ta=75°C2-5-°2C5°C 3 2 VCE= --2V 10 7 5 --0.01 23 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 23 5 ITR09586 5 2SD1998 3 2 hFE -- IC 100 7 5 3 Ta=75°C2-5-2°C5°C 2 VCE=2V 10 7 5 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 235 ITR09587 No.3130-2/4 3 2SB1324 2 Cob -- VCB 2SB1324 / 2SD1998 f=1MHz 3 2SD1998 2 Cob -- VCB f=1MHz Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Base-to-Emitter Saturation Voltage, VBE(sat) -- V 100 7 5 3 2 10 7 --1.0 23 5 7 --10 23 5 Collector-to-Base Voltage, VCB -- V ITR09588 --1000 VCE(sat) -- IC 2SB1324 IC / IB=20 7 5 3 2 25°C --100 7 5 Ta=75-°-C25°C 3 2 7 --0.1 7 2SB1324 5 23 5 7 --1.0 Collector Current, IC -- A VBE(sat) -- IC 23 5 ITR09590 IC / IB=20 3 2 --1.0 Ta=75°C 25°C 7 --25°C 5 7 --0.1 23 5 7 --1.0 23 5 10 7 ICP=5A 5 3 IC=3A 2 Collector Current, IC -- A ASO ITR09592 2SB1324 / 2SD1998 1ms 100ms 10ms 1.0 7 5 DC operation 3 2 0.1 7 Ta=25°C 5 Single pulse For PNP, minus sign is omitted 3 2 Mounted on a ceramic board (250mm2✕0.8mm) 2 3 5 7 1.0 .


B1324 D1998 MB91F376GS


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