Document
Ordering number : EN3130A
2SB1324 / 2SD1998
SANYO Semiconductors
DATA SHEET
2SB1324 / 2SD1998 PNP / NPN Epitaxial Planar Silicon Transistors
Compact Motor Driver Applications
Features
• Low saturation voltage. • Contains diode between collector and emitter. • Contains bias resistance between collector and emitter. • Large current capacity. • Small-sized package making it easy to provide high-density, small-sized hybrid ICs.
Specifications ( ) : 2SB1324
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO IC ICP PC Tj
Tstg
Conditions Mounted on a ceramic board (250mm2✕0.8mm)
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current DC Current Gain Marking 2SB1324 : BL
2SD1998 : DM
Symbol
ICBO hFE1 hFE2
Conditions
VCB=(--)30V, IE=0A VCE=(--)2V, IC=(--)0.5A VCE=(--)2V, IC=(--)2A
Ratings (--)40 (--)30 (--)6 (--)3 (--)5 1.5 150
--55 to +150
Unit V V V A A W °C °C
min
75 50
Ratings typ
max (--)1.0
Unit μA
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
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31710EA TK IM / 41504TN (PC)/O1598HA (KT)/6089MO, TS No.3130-1/4
2SB1324 / 2SD1998
Continued from preceding page.
Parameter
Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Diode Forwad Voltage Base-to-Emitter Resistance
Symbol
Conditions
fT Cob
VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO1 V(BR)CEO2 VF RBE
VCE=(--)2V, IC=(--)0.5A VCB=(--)10V, f=1MHz IC=(--)2A, IB=(--)100mA IC=(--)2A, IB=(--)100mA IC=(--)10μA, IE=0A IC=(--)10μA, RBE=∞ IC=(--)10μA, RBE=∞ IF=0.5A
Ratings min typ
100 (55)40 (--0.25)0.2
(--)40 (--)40 (--)30
0.8
max (--0.6)0.5
(--)1.5
1.5
Unit
MHz pF V V V V V V kΩ
Package Dimensions unit : mm (typ) 7007B-004
Electrical Connection
Collector
Collector
Base
RBE
Emitter
PNP
Base
RBE
Emitter
NPN
DC Current Gain, hFE DC Current Gain, hFE
5
2SB1324
3
2
hFE -- IC
100 7 5
Ta=75°C2-5-°2C5°C
3
2
VCE= --2V
10
7 5
--0.01
23
5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A
23 5 ITR09586
5
2SD1998
3
2
hFE -- IC
100
7 5
3
Ta=75°C2-5-2°C5°C
2
VCE=2V
10
7 5 0.01
2 3 5 7 0.1
2 3 5 7 1.0
Collector Current, IC -- A
235 ITR09587
No.3130-2/4
3
2SB1324
2
Cob -- VCB
2SB1324 / 2SD1998
f=1MHz
3
2SD1998
2
Cob -- VCB
f=1MHz
Output Capacitance, Cob -- pF
Output Capacitance, Cob -- pF
Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
100 7 5
3 2
10
7 --1.0
23
5 7 --10
23
5
Collector-to-Base Voltage, VCB -- V ITR09588
--1000
VCE(sat) -- IC
2SB1324
IC / IB=20
7
5
3
2 25°C
--100
7 5
Ta=75-°-C25°C
3 2
7 --0.1
7
2SB1324
5
23
5 7 --1.0
Collector Current, IC -- A
VBE(sat) -- IC
23
5
ITR09590
IC / IB=20
3 2
--1.0 Ta=75°C
25°C
7
--25°C
5
7 --0.1
23
5 7 --1.0
23
5
10
7 ICP=5A
5
3 IC=3A
2
Collector Current, IC -- A
ASO
ITR09592
2SB1324 / 2SD1998
1ms
100ms 10ms
1.0 7 5
DC operation
3
2
0.1
7 Ta=25°C 5 Single pulse
For PNP, minus sign is omitted
3 2
Mounted
on
a
ceramic
board
(250mm2✕0.8mm)
2 3 5 7 1.0
.