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B1451 Dataheets PDF



Part Number B1451
Manufacturers Sanyo
Logo Sanyo
Description PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet B1451 DatasheetB1451 Datasheet (PDF)

Ordering number:EN3151 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1451/2SD2200 80V/5A Switching Applications Features · Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1451/2SD2200-applied equipment. -High density surface mount applications. -Small size of 2SB1451/2SD2200-applied equipment. · Low collector-to-emitter saturation voltage. · Large current capacity. Package Dimensions unit:mm 2069B [2SB1451/2SD2200] ( ) : 2.

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Ordering number:EN3151 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1451/2SD2200 80V/5A Switching Applications Features · Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1451/2SD2200-applied equipment. -High density surface mount applications. -Small size of 2SB1451/2SD2200-applied equipment. · Low collector-to-emitter saturation voltage. · Large current capacity. Package Dimensions unit:mm 2069B [2SB1451/2SD2200] ( ) : 2SB1451 Specifications 1 : Base 2 : Collector 3 : Emitter SANYO : SMP-FD Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C (–)90 (–)80 (–)6 (–)5 (–)9 1.65 30 150 –55 to +150 V V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage ICBO IEBO hFE1 hFE2 fT VCE(sat) VCB=(–)80V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A VCE=(–)2V, IC=(–)3A VCE=(–)5V, IC=(–)1A IC=(–)3A, IB=(–)0.3A Ratings min typ 70* 30 20 max (–)0.1 (–)0.1 280* 0.4 (–0.5) Unit mA mA MHz V V * : The 2SB14512SD2200 are classified by 1A hFE as follows : 70 Q 140 100 R 200 140 S 280 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1098HA (KT)/7039MO, TS No.3151–1/4 2SB1451/2SD2200 Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol Conditions V(BR)CBO V(BR)CEO V(BR)EBO ton IC=(–)1mA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)1mA, IC=0 See specified test circuit. tstg See specified test circuit. tf See specified test circuit. Switching Time Test Circuit Ratings min typ (–)90 (–)80 (–)6 (0.2) 0.1 (0.7) 1.2 (0.2) 0.4 max Unit V V V µs µs µs µs µs µs No.3151–2/4 2SB1451/2SD2200 No.3151–3/4 2SB1451/2SD2200 Sp.


D1904 B1451 D2200


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