Document
Ordering number:EN3151
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1451/2SD2200
80V/5A Switching Applications
Features
· Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1451/2SD2200-applied equipment. -High density surface mount applications. -Small size of 2SB1451/2SD2200-applied equipment.
· Low collector-to-emitter saturation voltage. · Large current capacity.
Package Dimensions
unit:mm 2069B
[2SB1451/2SD2200]
( ) : 2SB1451
Specifications
1 : Base 2 : Collector 3 : Emitter SANYO : SMP-FD
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Junction Temperature Storage Temperature
VCBO VCEO VEBO
IC ICP PC
Tj Tstg
Tc=25˚C
(–)90 (–)80
(–)6 (–)5 (–)9 1.65
30 150 –55 to +150
V V V A A W W ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage
ICBO IEBO hFE1 hFE2
fT VCE(sat)
VCB=(–)80V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A VCE=(–)2V, IC=(–)3A VCE=(–)5V, IC=(–)1A IC=(–)3A, IB=(–)0.3A
Ratings min typ
70* 30
20
max (–)0.1 (–)0.1 280*
0.4 (–0.5)
Unit mA mA
MHz V V
* : The 2SB14512SD2200 are classified by 1A hFE as follows : 70 Q 140 100 R 200 140 S 280
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1098HA (KT)/7039MO, TS No.3151–1/4
2SB1451/2SD2200
Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
V(BR)CBO V(BR)CEO V(BR)EBO
ton
IC=(–)1mA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)1mA, IC=0 See specified test circuit.
tstg See specified test circuit.
tf See specified test circuit.
Switching Time Test Circuit
Ratings min typ (–)90 (–)80
(–)6 (0.2) 0.1 (0.7) 1.2 (0.2) 0.4
max
Unit
V V V µs µs µs µs µs µs
No.3151–2/4
2SB1451/2SD2200
No.3151–3/4
2SB1451/2SD2200
Sp.