TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SB1411
Switching Applications Hammer Drive, Pulse Motor Drive Appli...
TOSHIBA
Transistor Silicon
PNP Triple Diffused Type
2SB1411
Switching Applications Hammer Drive, Pulse Motor Drive Applications
2SB1411
Unit: mm
High DC current gain: hFE = 1500 (min) (VCE = −3 V, IC = −1 A) Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1 A)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−100
V
Collector-emitter voltage
VCEO
−100
V
Emitter-base voltage
VEBO −7 V
Collector current
DC Peak
IC
−2 A
ICP −3
Base current
IB −0.5 A
Collector power dissipation
Ta = 25°C Tc = 25°C
PC
2.0 W
20
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
−55 to 150
°C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
≈ 7 kΩ
≈ 150 Ω Emitter
1 2006-11-21
Electrical Characteristics (Tc = 25°C)
Characteristics Collector cut-of...