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B1411 Dataheets PDF



Part Number B1411
Manufacturers Toshiba
Logo Toshiba
Description SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR
Datasheet B1411 DatasheetB1411 Datasheet (PDF)

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1411 Switching Applications Hammer Drive, Pulse Motor Drive Applications 2SB1411 Unit: mm • High DC current gain: hFE = 1500 (min) (VCE = −3 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1 A) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −100 V Collector-emitter voltage VCEO −100 V Emitter-base voltage VEBO −7 V Collector current DC Peak IC −.

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TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1411 Switching Applications Hammer Drive, Pulse Motor Drive Applications 2SB1411 Unit: mm • High DC current gain: hFE = 1500 (min) (VCE = −3 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1 A) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −100 V Collector-emitter voltage VCEO −100 V Emitter-base voltage VEBO −7 V Collector current DC Peak IC −2 A ICP −3 Base current IB −0.5 A Collector power dissipation Ta = 25°C Tc = 25°C PC 2.0 W 20 Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C JEDEC ― JEITA SC-67 TOSHIBA 2-10R1A Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Collector Base ≈ 7 kΩ ≈ 150 Ω Emitter 1 2006-11-21 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol Test Condition ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) (1) VCE (sat) (2) VBE (sat) VCB = −100 V, IE = 0 VEB = −6 V, IC = 0 IC = −30 mA, IB = 0 VCE = −3 V, IC = −1 A VCE = −3 V, IC = −2 A IC = −1 A, IB = −2 mA IC = −2 A, IB = −8 mA IC = −1 A, IB = −2 mA 2SB1411 Min ― ― −100 1500 1000 ― ― ― Typ. Max ― −100 ― −2.5 ―― ― 15000 ―― ― −1.5 ― −2.5 ― −2.2 Unit μA mA V V V Turn-on time Switching time Storage time Fall time ton IB2 Output ― 1.0 ― IB1 IB2 30 Ω Input IB1 tstg ― 3.0 ― μs VCC ≈ −30 V 20 μs tf −IB1 = IB2 = 2 mA, duty cycle ≤ 1% ― 2.0 ― Marking B1411 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-21 Collector current IC (A) IC – VCE −4 Common emitter −4.0 −3 −6.0 −2.0 Tc = 25°C −1.0 −2 −0.6 −0.4 −1 IB = −0.2 mA 0 0 −2 −4 −6 −8 −10 Collector-emitter voltage VCE (V) 10000 5000 3000 1000 500 300 hFE – IC Tc = 100°C 25 Common emitter VCE = −3 V −55 100 −0.05 −0.1 −0.3 −0.5 −1 −3 −5 Collector current IC (A) −10 −20 Collector-emitter voltage VCE (V) ) Collector current IC (A) 2SB1411 −3.0 Common emitter −2.5 VCE = −3 V IC – VBE −2.0 −1.5 Tc = 100°C 25 −55 −1.0 −0.5 0 0 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 −2.8 −3.2 Base-emitter voltage VBE (V) −2.4 −2.0 −1.6 −1.2 −0.8 −0.4 VCE – IB Common emitter Tc = 25°C IC = −2.0 A −1.5 −1.0 −0.5 −0.1 0 −0.1 −0.3 −0.5 −1 −3 −5 −10 Base current IB (mA) −30 DC current gain hFE Collector-emitter saturation voltage VCE (sat) (V) VCE (sat) – IC −10 Common emitter IC/IB = 250 −5 −3 −1 −0.5 −0.1 Tc = −55°C 25 100 −0.3 −0.5 −1 Collector current IC (A) −3 −5 Base-emitter saturation voltage VBE (sat) (V) −10 −5 −3 −1 −0.5 −0.1 VBE (sat) – IC Common emitter IC/IB = 250 Tc = −55°C 25 100 −0.3 −0.5 −1 Collector current IC (A) −3 −5 3 2006-11-21 Transient thermal resistance rth (°C/W) 2SB1411 100 Curves should be applied in thermal limited area. 30 (single nonrepetitive pulse) (1) Infinite heat sink (2) No heat sink 10 rth – tw 3 1 0.3 0.1 0.001 0.01 0.1 1 10 Pulse width tw (s) (2) (1) 100 1000 Safe Operating Area −5 −3 IC max (pulsed)* IC max (continuous) 100 μs* 1 ms* −1 −0.5 DC operation 10 ms* Tc = 25°C −0.3 −0.1 *: Single nonrepetitive pulse Tc = 25°C −0.05 Curves must be derated linearly with increase in temperature. −0.02 −2 −5 −10 VCEO max −30 −50 −100 Collector-emitter voltage VCE (V) −300 Collector current IC (A) 4 2006-11-21 2SB1411 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in .


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