Document
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SB1411
Switching Applications Hammer Drive, Pulse Motor Drive Applications
2SB1411
Unit: mm
• High DC current gain: hFE = 1500 (min) (VCE = −3 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1 A)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−100
V
Collector-emitter voltage
VCEO
−100
V
Emitter-base voltage
VEBO −7 V
Collector current
DC Peak
IC
−2 A
ICP −3
Base current
IB −0.5 A
Collector power dissipation
Ta = 25°C Tc = 25°C
PC
2.0 W
20
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
−55 to 150
°C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
≈ 7 kΩ
≈ 150 Ω Emitter
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Electrical Characteristics (Tc = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage
Symbol
Test Condition
ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) (1) VCE (sat) (2) VBE (sat)
VCB = −100 V, IE = 0 VEB = −6 V, IC = 0 IC = −30 mA, IB = 0 VCE = −3 V, IC = −1 A VCE = −3 V, IC = −2 A IC = −1 A, IB = −2 mA IC = −2 A, IB = −8 mA IC = −1 A, IB = −2 mA
2SB1411
Min
― ― −100 1500 1000 ― ― ―
Typ. Max
― −100 ― −2.5 ―― ― 15000 ―― ― −1.5 ― −2.5 ― −2.2
Unit μA mA V
V V
Turn-on time Switching time Storage time
Fall time
ton
IB2
Output
― 1.0 ―
IB1 IB2 30 Ω
Input IB1
tstg
― 3.0 ―
μs
VCC ≈ −30 V
20 μs tf
−IB1 = IB2 = 2 mA, duty cycle ≤ 1%
― 2.0 ―
Marking
B1411
Part No. (or abbreviation code) Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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Collector current IC (A)
IC – VCE
−4
Common emitter
−4.0 −3
−6.0
−2.0
Tc = 25°C
−1.0 −2
−0.6
−0.4
−1 IB = −0.2 mA
0 0 −2 −4 −6 −8 −10
Collector-emitter voltage VCE (V)
10000 5000 3000
1000 500 300
hFE – IC
Tc = 100°C
25
Common emitter VCE = −3 V
−55
100 −0.05 −0.1
−0.3 −0.5 −1
−3 −5
Collector current IC (A)
−10 −20
Collector-emitter voltage VCE (V)
)
Collector current IC (A)
2SB1411
−3.0 Common emitter
−2.5 VCE = −3 V
IC – VBE
−2.0 −1.5
Tc = 100°C 25
−55
−1.0
−0.5
0 0 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 −2.8 −3.2
Base-emitter voltage VBE (V)
−2.4 −2.0 −1.6 −1.2 −0.8 −0.4
VCE – IB
Common emitter Tc = 25°C
IC = −2.0 A −1.5 −1.0 −0.5
−0.1
0 −0.1
−0.3 −0.5 −1
−3 −5 −10
Base current IB (mA)
−30
DC current gain hFE
Collector-emitter saturation voltage VCE (sat) (V)
VCE (sat) – IC
−10 Common emitter IC/IB = 250
−5
−3
−1 −0.5
−0.1
Tc = −55°C 25
100 −0.3 −0.5
−1
Collector current IC (A)
−3 −5
Base-emitter saturation voltage VBE (sat) (V)
−10 −5 −3
−1 −0.5
−0.1
VBE (sat) – IC
Common emitter IC/IB = 250
Tc = −55°C 25
100
−0.3 −0.5
−1
Collector current IC (A)
−3 −5
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Transient thermal resistance rth (°C/W)
2SB1411
100 Curves should be applied in thermal limited area.
30 (single nonrepetitive pulse) (1) Infinite heat sink
(2) No heat sink 10
rth – tw
3 1
0.3 0.1 0.001
0.01
0.1 1 10
Pulse width tw (s)
(2) (1)
100 1000
Safe Operating Area
−5
−3 IC max (pulsed)* IC max (continuous)
100 μs*
1 ms*
−1 −0.5
DC operation 10 ms* Tc = 25°C
−0.3
−0.1 *: Single nonrepetitive pulse
Tc = 25°C −0.05 Curves must be derated
linearly with increase in
temperature.
−0.02 −2
−5
−10
VCEO max −30 −50 −100
Collector-emitter voltage VCE (V)
−300
Collector current IC (A)
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2SB1411
RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
20070701-EN
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in .