Document
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SB1667(SM)
2SB1667(SM)
Audio Frequency Power Amplifier Applications
Unit: mm
• Low saturation voltage: VCE (sat) = −1.7 V (max) (IC = −3 A, IB = −0.3 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
VCBO VCEO VEBO
IC IB
PC
−60 −60 −7 −3 −0.5 1.5 25
V V V A A
W
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEDEC JEITA
― ―
Note1: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-10S2A
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
Weight: 1.4 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
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Electrical Characteristics (Ta = 25°C)
2SB1667(SM)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
Symbol
Test Condition
ICBO
VCB = −60 V, IE = 0
IEBO
VEB = −7 V, IC = 0
V (BR) CEO IC = −50 mA, IB = 0
hFE (1) (Note 2)
VCE = −5 V, IC = −0.5 A
hFE (2) VCE (sat)
VBE fT Cob
VCE = −5 V, IC = −3 A IC = −3 A, IB = −0.3 A VCE = −5 A, IC = −0.5 A VCE = −5 V, IC = −0.5 A VCB = −10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
― ― −100 μA ― ― −100 μA −60 ― ― V
60 ― 300
20 ― ―
― −0.5 −1.7 V
― −0.7 −1.0 V
― 9 ― MHz
― 150 ―
pF
Turn-on time
ton
20 μs
Input IB1
Output
―
0.4
―
IB1 IB2 15 Ω
Switching time Storage time Fall time
tstg IB2
VCC = −30 V tf IB1 = 0.2 A,IB2 = 0.2 A,
duty cycle ≤ 1%
― 1.7 ― μs ― 0.5 ―
Note 2: hFE (1) classification O: 60 to 120, Y: 100 to 200, GR: 150 to 300
Marking
B1667
Part No. (or abbreviation code) Lot No.
Characteristics indicator
Note 3
Note 3: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
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2009-12-21
Collector current IC (A)
IC – VCE
−4 Common emitter Tc = 25°C
−80 −70 −60 −3
−50 −40 −30
−2 −20
IB = −10 mA −1
0 0
0 −1 −2 −3 −4 −5
Collector-emitter voltage VCE (V)
1000
500 Tc = 100°C
300 25 −25
100
50
hFE – IC
Common emitter VCE = −5V
20 −0.02
−0.1
−0.3
−1
Collector current IC (A)
−3
Collector-emitter saturation voltage VCE (sat) (V)
Collector current IC (A)
2SB1667(SM)
−3.0 −2.0 −1.0
IC – VBE
Tc = 100°C
Common emitter VCE = −5 V
25 −25
0 0 −0.4 −0.8 −1.2 −1.6
Base-emitter voltage VBE (V)
VCE (sat) – IC
−1 Common emitter
−0.5 IC/IB = 10
−0.3
Tc = 100°C
−0.1 −0.05
−25
25
−0.02 −0.02
−0.1
−0.3
−1
Collector current IC (A)
−3 −5
DC current gain hFE
Transient thermal resistance rth (°C/W)
100 Curves should be applied in thermal limited area. (Single nonrepetitive pulse)
10
rth – tw
1
No heat sink Infinite heat sink
0 0.001
0.01
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0.1 1
10
Pulse width tw (s)
3
100 1000
2009-12-21
Collector power dissipation PC (W) Collector current IC (A)
PC – Ta
30 Infinite heat sink
25
20
15
10
5 No heat sink
0 0 50 100 150
Ambient temperature Ta (°C)
200
2SB1667(SM)
Safe operation area
10 IC max (pulse)*
IC max (continous)
1 ms* 10 ms*
DC operation Tc = 25°C
1
100 ms*
1 s*
*: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with
increase in temperature. 0.1
1
10
Collector-emitter voltage VCE (V)
100
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2SB1667(SM)
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is witho.