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B1667 Dataheets PDF



Part Number B1667
Manufacturers Toshiba
Logo Toshiba
Description Silicon PNP Triple Diffused Type Transistor
Datasheet B1667 DatasheetB1667 Datasheet (PDF)

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1667(SM) 2SB1667(SM) Audio Frequency Power Amplifier Applications Unit: mm • Low saturation voltage: VCE (sat) = −1.7 V (max) (IC = −3 A, IB = −0.3 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C VCBO VCEO VEBO IC IB PC −60 −60 −7 −3 −0.5 1.5 25 V V .

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TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1667(SM) 2SB1667(SM) Audio Frequency Power Amplifier Applications Unit: mm • Low saturation voltage: VCE (sat) = −1.7 V (max) (IC = −3 A, IB = −0.3 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C VCBO VCEO VEBO IC IB PC −60 −60 −7 −3 −0.5 1.5 25 V V V A A W Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA ― ― Note1: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-10S2A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 1.4 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Downloaded from Elcodis.com electronic components distributor 1 2009-12-21 Electrical Characteristics (Ta = 25°C) 2SB1667(SM) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO VCB = −60 V, IE = 0 IEBO VEB = −7 V, IC = 0 V (BR) CEO IC = −50 mA, IB = 0 hFE (1) (Note 2) VCE = −5 V, IC = −0.5 A hFE (2) VCE (sat) VBE fT Cob VCE = −5 V, IC = −3 A IC = −3 A, IB = −0.3 A VCE = −5 A, IC = −0.5 A VCE = −5 V, IC = −0.5 A VCB = −10 V, IE = 0, f = 1 MHz Min Typ. Max Unit ― ― −100 μA ― ― −100 μA −60 ― ― V 60 ― 300 20 ― ― ― −0.5 −1.7 V ― −0.7 −1.0 V ― 9 ― MHz ― 150 ― pF Turn-on time ton 20 μs Input IB1 Output ― 0.4 ― IB1 IB2 15 Ω Switching time Storage time Fall time tstg IB2 VCC = −30 V tf IB1 = 0.2 A,IB2 = 0.2 A, duty cycle ≤ 1% ― 1.7 ― μs ― 0.5 ― Note 2: hFE (1) classification O: 60 to 120, Y: 100 to 200, GR: 150 to 300 Marking B1667 Part No. (or abbreviation code) Lot No. Characteristics indicator Note 3 Note 3: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. Downloaded from Elcodis.com electronic components distributor 2 2009-12-21 Collector current IC (A) IC – VCE −4 Common emitter Tc = 25°C −80 −70 −60 −3 −50 −40 −30 −2 −20 IB = −10 mA −1 0 0 0 −1 −2 −3 −4 −5 Collector-emitter voltage VCE (V) 1000 500 Tc = 100°C 300 25 −25 100 50 hFE – IC Common emitter VCE = −5V 20 −0.02 −0.1 −0.3 −1 Collector current IC (A) −3 Collector-emitter saturation voltage VCE (sat) (V) Collector current IC (A) 2SB1667(SM) −3.0 −2.0 −1.0 IC – VBE Tc = 100°C Common emitter VCE = −5 V 25 −25 0 0 −0.4 −0.8 −1.2 −1.6 Base-emitter voltage VBE (V) VCE (sat) – IC −1 Common emitter −0.5 IC/IB = 10 −0.3 Tc = 100°C −0.1 −0.05 −25 25 −0.02 −0.02 −0.1 −0.3 −1 Collector current IC (A) −3 −5 DC current gain hFE Transient thermal resistance rth (°C/W) 100 Curves should be applied in thermal limited area. (Single nonrepetitive pulse) 10 rth – tw 1 No heat sink Infinite heat sink 0 0.001 0.01 Downloaded from Elcodis.com electronic components distributor 0.1 1 10 Pulse width tw (s) 3 100 1000 2009-12-21 Collector power dissipation PC (W) Collector current IC (A) PC – Ta 30 Infinite heat sink 25 20 15 10 5 No heat sink 0 0 50 100 150 Ambient temperature Ta (°C) 200 2SB1667(SM) Safe operation area 10 IC max (pulse)* IC max (continous) 1 ms* 10 ms* DC operation Tc = 25°C 1 100 ms* 1 s* *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.1 1 10 Collector-emitter voltage VCE (V) 100 Downloaded from Elcodis.com electronic components distributor 4 2009-12-21 2SB1667(SM) RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is witho.


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