DATA SHEET www.onsemi.com
Bipolar Transistor
–20 V, –5 A, Low VCE(sat), PNP Single PCP
2SB1302
Features
• Adoption of ...
DATA SHEET www.onsemi.com
Bipolar
Transistor
–20 V, –5 A, Low VCE(sat),
PNP Single PCP
2SB1302
Features
Adoption of FBET, MBIT Processes Large Current Capacity Ultrasmall Size Making it Easy to Provide High−Density
Small−Sized Hybrid IC’s
Low Collector to Emitter Saturation Voltage Fast Switching Speed These Devices are Pb−Free and are RoHS Compliant
Applications
DC−DC Converters, Motor Drivers, Relay Drivers, Lamp Drivers
SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Symbol
Value
Unit
Collector to Base Voltage
VCBO
−25
V
Collector to Emitter Voltage
VCEO
−20
V
Emitter to Base Voltage
VEBO
−5
V
Collector Current
IC
−5
A
Collector Current (Pulse)
ICP
−8
A
Collector Dissipation (Note 1)
PC
1.3
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on ceramic substrate (250 mm2 x 0.8 mm).
1 2 3
SOT−89 / PCP−1 CASE 419AU
ELECTRICAL CONNECTION
2
1 3
1: Base 2: Collector 3: Emitter
MARKING DIAGRAM
BJ
LOT No.
RANK
ORDERING INFORMATION
Device 2SB1302S−TD−E
2SB1302T−TD−E
Package
PCP (Pb−Free)
PCP (Pb−Free)
Shipping†
1000 / Tape & Reel
1000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refe...