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IXGH40N60C2D1

IXYS

HiPerFAST IGBT

HiPerFASTTM IGBTs w/ Diode C2-Class High Speed IGBTs IXGT40N60C2D1 IXGJ40N60C2D1 IXGH40N60C2D1 VCES = IC110 = ≤VCE(S...


IXYS

IXGH40N60C2D1

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HiPerFASTTM IGBTs w/ Diode C2-Class High Speed IGBTs IXGT40N60C2D1 IXGJ40N60C2D1 IXGH40N60C2D1 VCES = IC110 = ≤VCE(SAT) tfi(typ) = 600V 40A 2.7V 32ns TO-268 (IXGT) Symbol VCES VCGR VGES VGEM IICC12150 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TTCC = 25°C ( Limited by Lead) = 110°C TC = 25°C, 1ms VGE= 15V, TJ = 125°C, RG = 10Ω Clamped Inductive Load TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-247 TO-268 Maximum Ratings 600 600 ±20 ±30 V V V V 75 A 40 A 200 A ICM = 80 VCE ≤ VCES 300 -55 ... +150 150 -55 ... +150 300 260 1.13/10 A W °C °C °C °C °C Nm/lb.in. 6g 4g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE= 0V TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 30A, VGE = 15V, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 3.0 5.0 V 200 μA 3 mA ±100 nA 2.2 2.7 V 1.7 V © 2010 IXYS CORPORATION, All Rights Reserved G E C (Tab) TO-268 (IXGJ) G C E TO-247 (IXGH) C (Tab) G CE C (Tab) G = Gate E = Emitter C = Collector Tab = Collector Features z Very High Frequency IGBT z Square RBSOA z High Current Handling Capability Applications z Uninterruptible Power Supplies (UPS) z Switch-Mode and Resonant-Mode Power Supplies z AC Motor Speed Control z DC Servo and Robot Drives z DC Choppers Advantages z High Power...




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