Trench gate field-stop IGBT
STGW40S120DF3, STGWA40S120DF3
Trench gate field-stop IGBT, S series 1200 V, 40 A low drop
Datasheet - production data
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Description
STGW40S120DF3, STGWA40S120DF3
Trench gate field-stop IGBT, S series 1200 V, 40 A low drop
Datasheet - production data
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Figure 1. Internal schematic diagram &RU7$%
Features
10 µs of short-circuit withstand time VCE(sat) = 1.65 V (typ.) @ IC = 40 A Tight parameter distribution Safer paralleling Low thermal resistance Soft and fast recovery antiparallel diode
Applications
Industrial drives UPS Solar Welding
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Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the S series of 1200 V IGBTs which is tailored to maximize efficiency of low frequency industrial systems. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
Order code STGW40S120DF3 STGWA40S120DF3
Table 1. Device summary
Marking
Package
G40S120DF3
TO-247
G40S120DF3
TO-247 long leads
Packing Tube Tube
December 2014
This is information on a product in full production.
DocID026373 Rev 2
1/18
www.st.com
Contents
Contents
STGW40S120DF3, STGWA40S120DF3
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . ....
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