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FP35R12KT4

Infineon

IGBT

TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FP35R12KT4 EconoPIM™2ModulmitTrench/Feldst...


Infineon

FP35R12KT4

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TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FP35R12KT4 EconoPIM™2ModulmitTrench/FeldstoppIGBT4undEmitterControlled4Diode EconoPIM™2modulewithtrench/fieldstopIGBT4andEmitterControlled4diode IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 100°C, Tvj max = 175°C PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms Gesamt-Verlustleistung Totalpowerdissipation TC = 25°C, Tvj max = 175°C Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage  VorläufigeDaten PreliminaryData VCES  IC nom  ICRM  Ptot  VGES  1200 35 70 210 +/-20 V A A W V CharakteristischeWerte/CharacteristicValues Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage IC = 35 A, VGE = 15 V IC = 35 A, VGE = 15 V IC = 35 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 1,20 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj ...




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