KTC2875

KTC2875(BR3DG2875M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN 。Silicon NPN transistor in a SOT-23 Plastic Package. / Features EB ,( 150)，（IB=5mA 1 ）。 High VEBO,high reverse hFE(typ.150,VCE=-2V,IC=-2mA),low on resistance(Ron=1Ω,IB=5mA). / Applications 。 For muting and switching applications. / Equivalent Circuit / Pinning 3 2 1 PIN 1：Emitter PIN 2：Base PIN 3：Collector / hFE Classifications & Marking hFE Classifications Symbol hFE Range A 200～700 B 350～1200 Marking HMA HMB http://www.fsbrec.com 1/6 KTC2875(BR3DG2875M) Rev.C Feb.-2015 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg DATA SHEET Rating 50 20 25 300 60 150 150 -55～150 Unit V V V mA mA mW ℃ ℃ / Electrical Characteristics(Ta=25℃) Parameter Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Forward Current Transfer Ratio Base-Emitter Voltage Collector to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Turu-On Time Storage Time Fall Time Symbol Test Conditions VCBO IC=100uA Min Typ Max Unit 50 V VCEO IC=500uA 20 V VEBO IE=100uA 25 V ICBO VCB=50V IE=0 0.1 μA IEBO VEB=25V IC=0 0.1 μA hFE VCE=2.0V I...