TSG40N120CE
TO-264
Pin Definition: 1. Gate 2. Collector 3. Emitter
TSG40N120CE
N-Channel IGBT with FRD.
PRODUCT SUMMARY
VCES (V)...
Description
TO-264
Pin Definition: 1. Gate 2. Collector 3. Emitter
TSG40N120CE
N-Channel IGBT with FRD.
PRODUCT SUMMARY
VCES (V)
VGES (V)
1200
±20
IC (A)
40
General Description
The TSG40N120CE using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.
Features
Block Diagram
● 1200V NPT Trench Technology ● High Speed Switching ● Low Conduction Loss
Ordering Information
Part No.
TSG40N120CE C0
Package
TO-264
Packing
25pcs / Tube
NPT Trench IGBT
Absolute Maximum Rating (TA=25oC unless otherwise noted)
Parameter
Symbol
Collector-Emitter Voltage Gate-Emitter Voltage
Continuous Current
TC=25oC TC=100oC
VCES VGES
IC
Pulsed Collector Current *
Diode Forward Current (TC=100℃)
Diode Pulse Forward Current Max Power Dissipation
TJ=25oC TJ=100oC
Operating Junction Temperature
Storage Temperature Range * Repetitive rating: Pulse width limited by max. junction temperature
ICM IF IFM
PD
TJ TSTG
Limit
1200 ±20 64 40 120 40 240 208 83 -55 to +150 -55 to +150
Unit
V V A A A A A
W
ºC oC
1/10 Version: B12
TSG40N120CE
N-Channel IGBT with FRD.
Thermal Performance Parameter
Symbol
Thermal Resistance - Junction to Case
IGBT DIODE
RӨJC
Thermal Resistance - Junction to Ambient
RӨJA
Electrical Specifications (Tc=25oC unless o...
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