IPW90R120C3

CoolMOS™ Power Transistor Features Lowest figure-of-merit RON x Qg Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Worldwide best R DS,on in TO247 Ultra low gate charge IPW90R120C3 Product Summary V DS @ T J=25°C R DS(on),max @ T J=25°C Q g,typ 900 V 0.12 Ω 270 nC PG-TO247 CoolMOS™ 900V is designed for: Quasi Resonant Flyback / Forward topologies PC Silverbox and consumer applications Industrial SMPS Type IPW90R120C3 Package PG-TO247 Marking 9R120C Maximum ratings, at T J=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) ID I D,pulse T C=25 °C T C=100 °C T C=25 °C Avalanche energy, single pulse Avalanche energy, repetitive t 2),3) AR Avalanche current, repetitive t 2),3) AR MOSFET dv /dt ruggedness E AS E AR I AR dv /dt I D=8.8 A, V DD=50 V I D=8.8 A, V DD=50 V V DS=0...400 V Gate source voltage V GS static AC (f>1 Hz) Power dissipation P tot T C=25 °C Operating and storage temperature T J, T stg Mounting torque M3 and M3.5 screws Value 36 23 96 1940 2.9 8.8 50 ±20 ±30 417 -55 ... 150 60 Unit A mJ A V/ns V W °C Ncm Rev. 1.0 page 1 2008-07-30 Please note the new package dimensions arccording to PCN 2009-134-A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current2) Reverse diode dv /dt 4) Symbol Co...