IPD90R1K2C3

IPD90R1K2C3 CoolMOS™ Power Transistor Features Lowest figure-of-merit RON x Qg Extreme dv/dt rated High peak current capability Product Summary V DS @ T J=25°C R DS(on),max @T J=25°C Q g,typ 900 V 1.2 Ω 28 nC Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant; available in Halogen free mold compounda) Ultra low gate charge PG-TO252 CoolMOS™ 900V is designed for: Quasi Resonant Flyback / Forward topologies PC Silverbox and consumer applications Industrial SMPS Type IPD90R1K2C3 Package PG-TO252 Marking 9R1K2C Maximum ratings, at T J=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Pulsed drain current 2) I D,pulse Avalanche energy, single pulse Avalanche energy, repetitive t AR 2),3) Avalanche current, repetitive t AR 2),3) MOSFET dv /dt ruggedness E AS E AR I AR dv /dt Gate source voltage V GS T C=25 °C T C=100 °C T C=25 °C I D=0.92 A, V DD=50 V I D=0.92 A, V DD=50 V V DS=0...400 V static AC (f>1 Hz) Power dissipation Operating and storage temperature P tot T C=25 °C T J, T stg Value 5.1 3.2 10 68 0.31 0.92 50 ±20 ±30 83 -55 ... 150 a) non-Halogen free (OPN: IPD90R1K2C3BT); Halogen free (OPN: IPD90R1K2C3AT) Rev. 21.0 page 1 Unit A mJ A V/ns V W °C 200183--0077--2391 Maximum ratings, at T J =25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 2) Reverse diode dv/dt 4) Symbol Conditions IS I S,pulse dv...