MPS-U55 Datasheet PDF - New Jersey Semi-Conductor

PNP SILICON ANNULAR AMPLIFIER TRANSISTORS . . . designed for general-purpose, high-voltage ampl fier and driver applications. High Collector-Emitter Breakdown Voltage BVCEO = 60 Vdc NPN MPS-U05 and MPS-U06 PNP SILICON AMPLIFIER TRANSISTORS MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation @ TA - 25°C Derate above 25°C Total Device Dissipation 9 TC 25°C Derate above.25°C Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB ic PD PD Tj.Tstg MPS-U55 MPS-U56 60 80 60 SO 4.0 2.0 1.0 8.0 10 80 -55 to 1 150 Unit Vdc Vdc Vdc Adc Watt mW/°C Watts mW/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol "JC «JA Max 12.5 125 Unit °c/w °c/w 0360 ~ 0.375 — -0.190 1 T rail Collector Connected Quality S<=imi-Conrh.)rtor$

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