MPSU05

tSsmi-Conaucto'i ZPioaueti, Line. J 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MPS-U05 (SILICON) MPS-U06 TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 NPN SILICON ANNULAR AMPLIFIER TRANSISTORS . . . designed for general-purpose, high-voltage amplifier anddriver applications. NPN SILICON AMPLIFIER TRANSISTORS BVcEO - 60 Vdc (Mini @> IQ - 1.0 mAdc - MPS-U06 80 Vdc(Min) @ lc = 1.0 mAdc - MPS-U06 High Power Dissipation - PQ == 10 W @ TC = 25°C Complements to PNP MPS-U&5 and MPS-U56 f MAXIMUM RATINGS Riling Collector-Emitter Voltage Collector-Baie Voltage Emitnr Ban Voltaos Collector Currant - Continuout Tonl Coww Dinipation e TA 25°C Derate above 25°C Total PovMr Diulpation ® Tc « 25°C Derate above 25°C Operating andStorage Junction Tamptrnura Range Symbol VQEQ VCB VEB IG PQ PD Tj,Tj,0 MPS-U06 MPS-U06 60 80 60 80 4.0 2.0 1.0 8.0 '0 80 -65 to +150 Unit Vdc Vdc Vdc Adc Watt mW/°C Watn mW/°C °C THERMAL CHARACTERISTICS Charaettriitic Symlwl Max Therrrnl Rninanca, Junction to Cue Thermal Retisunce, Junction to Ambiant B9JC R9JA<" 12.5 125 (1) R#JA >< measurad uvith tha device lolderad into a typical printed circuit board. Unit °C/W °C/W — A — F--^ — B-- vt-. "^4- 3 21 HT R— t Q frc L i D— -G * — | - STYLE 1 —\RL, „ PIN 1. EM " 2. BA,E 3- CO LLECTQ R MILLIMETERS INCHES DIM MIN MAX MIN MAX A 9.14 9.63 0.360 0.375 R 6.60 724 0.260 0.285 C S.4I s.e? 0.2 U 0.22; u 0.38 0.53 _OJUi F 3.19 3.33 0.12S P.1J1 G 2.S49SC 0.11 BSC H 3....