SiHA25N50E

www.vishay.com SiHA25N50E Vishay Siliconix E Series Power MOSFET Thin-Lead TO-220 FULLPAK D G G DS S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 550 VGS = 10 V 86 14 25 Single 0.145 FEATURES Low figure-of-merit (FOM): Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction losses Low gate charge (Qg) Avalanche energy rated (UIS) Available Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATONS Hard switched topologies Power factor correction power supplies (PFC) Switch mode power supplies (SMPS) Computing - PC silver box / ATX power supplies Lighting - Two stage LED lighting ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free Thin-Lead TO-220 FULLPAK SiHA25N50E-E3 SiHA25N50E-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) e Pulsed drain current a Linear derating factor Single pulse avalanche energy b Maximum power dissipation Operating junction and storage temperature range Drain-source voltage slope Reverse diode dV/dt d Soldering recommendations (peak temperature) c VGS at 10 V TC = 25 °C TC = 100 °C VDS = 0 V to 80 % VDS for 10 s VDS VGS ID IDM EAS PD TJ, Tstg dV/dt Mounting torque M3 screw Notes a. Repetitive rating; pulse width limited by maximu...