INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD858
DESCRIPTION ·Collector-Emitte...
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2SD858
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·High Collector Power Dissipation
APPLICATIONS ·Designed for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60 V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
60 V 5V
IC Collector Current-Continuous
5A
ICM Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
10 A 60 W 150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.cn
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INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2SD858
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VBE(on) Base-Emitter On Voltage
IC= 3A; VCE= 4V
ICEO Collector Cutoff Current
VCE= 30V; IB= 0
ICES Collector Cutoff Current IEBO Emitter Cutoff Current
VCE= 60V; VBE= 0 VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 4V
hFE-2
DC Current Gain
Switching Times
IC= 3A; VCE= 4V
ton Turn-On Time toff Turn-Off Time
IC= 6A; IB1= -IB2= 0.6A
MIN TYP. MAX UNIT 60 V
1.5 V 1.6 V 700 μA 400 μA 1 mA 40 250 20
0.2 μs 1.4 μs
hFE-1 Classifications RQP
40-90 70-150 120-250
isc website：www.iscsemi.cn
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