Document
4Gb/s GaAs Standard Logic IC
FEATURES
• Ultra high speed operation up to 5 GHz from DC • Fast rise and fall time less than 80 ps • High input sensitivity: typ. 150mVp-p at 4 GHz (FMM362HG/HE) • High phase margin: typ. 200 deg. at 4 GHz (FMM362HG/HE) • Internal 50Ω input termination resistor for direct series connection • ECL compatible input and output • Single-5.2V power supply • Stable operation at wide temperature range between 0 and 85°C • Advanced packaging technology for ultra-fast application
FMM362HG/HE, FMM363HG/HE
HG
DESCRIPTION
FMM362HG/HE and FMM363HG/HE are ultra high speed GaAs standard logic ICs designed for multi-gigabit optical communication systems and digital test instruments.
HE
• FMM362HG/HE: Master-slave D-type Flip Flop (D-F/F) : Typ. 5 GHz • FMM363HG/HE: 2-Input OR/NOR Gate (OR/NOR) : Typ. 5 Gbps
These logic ICs are capable of minimizing output rise and fall time of less than 80 ps. FMM362HG/HE has a high input sensitivity of typ. 150mVp-p and phase margin of typ. 200 deg. at 4 GHz. FMM360 series is provided with internal 50Ω input termination resistor for direct series connection to eliminate the need of additional external biasing network. The GaAs die is attached into advanced 14-pin metal/ceramic flat package designed for
ultra high speed application.
Edition 1.0 March 1999
1
FMM362HG/HE, FMM363HG/HE
ABSOLUTE MAXIMUM RATINGS (VDD = 0V)
Rating
Symbol
Supply Voltage Input Termination Voltage Output Termination Voltage Input Voltage Reference Voltage Power Dissipation
VSS VTI VTO VIN VREF PD
Storage Temperature
Tstg
4Gb/s GaAs Standard Logic IC
Values -7.0 to 0 -3.0 to 0 -3.0to 0 -2.0 to 0 -2.0 to 0
1.0 -55 to +150
Unit V V V V V W °C
ELECTRICAL CHARACTERISTICS (Tc = 25°C, VSS = -5.2V, VDD = 0V)
FMM362HG/HE
FMM363HG/HE
Parameter
Symbol
(D-F/F)
(OR/NOR)
Min. Typ. Max. Min. Typ. Max.
Maximum Clock Frequency (Note 1)
45
-
45-
High Level Input Voltage
VIH -1.0 -0.9
-
-1.0 -0.9 -
Low Level Input Voltage
VIL - -1.7 -1.6 - -1.7 -1.6
High Level Output Voltage (Note 2) VOH -0.95 -
- -0.95 -
-
Low Level Output Voltage (Note 2) VOL
-
- -1.65
-
- -1.65
Output Rise Time (Note 3)
tf - 60 80 - 60 80
Output Fall Time (Note 3)
tf - 60 80 - 60 80
Power Supply Current
Iss - 90 -
- 90 -
Note 1: FMM363HG/HE-Maximum Data Rate (Gbit/s) NRZ
Note 2: 50W termination to -2V (VTO) Note 3: 20%~80%
Unit
Gbps V V V V ps ps mA
Edition 1.0
March 1999
2
4Gb/s GaAs Standard Logic IC
FMM362HG/HE, FMM363HG/HE
RECOMMENDED OPERATING CONDITIONS (VDD = 0V)
Parameter
Symbol
Min.
Value Typ.
Supply Voltage
VSS
-5.46
-5.2
Output Termination Voltage
VTO
-2.1
-2.0
Reference Voltage
VREF
-1.4
-1.3
Output Termination Resistor* RTO
Operating Case Temperature
Tc
* Not required for direct series connection to FMM360 series STD logic.
0
50 -
Max. -4.94
-1.9 -1.2
+65
TYPICAL CHARACTERISTICS
Unit
V V V Ω °C
Rise/Fall Time (ps)
120 FMM363HG
100 80 tr 60 tf 40 20
00
50 100
Case Temperature (°C)
600 FMM362HG(Tc=25°C) 360
500 300
400
300 200
200 100
100
0 01 2 3 4 56
Data Rate (Gb/s)
Phase Margin (deg)
OUTPUT WAVEFORMS (Tc=25°C) FMM362HG
5.0Gb/s
17.4200 ns
18.4200 ns
19.4200 ns
H: 100ps/div V: 500mV/div
FMM363HG
5.0Gb/s
16.7020 ns
17.2020 ns
17.7020 ns
H: 100ps/div V: 500mV/div
Input Sensitivity (mVp-p)
Edition 1.0 March 1999
3
FMM362HG/HE, FMM363HG/HE
4Gb/s GaAs Standard Logic IC
800mV
DIN1 (1GHz)
OUT
tPHL= 175ps
PULSE RESPONSE FMM362HG(Tc=25°C)
tPHL=170ps
OUT DIN2=Low
150 ps
800mV
800mV
1.6 MAX 0.6±0.1
“HG” PACKAGE
UNIT: mm
R 0.5 TYP.
0.40
10.0 TYP. 5.2±0.2
1.27 TYP.
1 14 2 13 3 12 4 11 5 10 69 78
2.0 TYP.
5.60±0.2
2.0 TYP.
3.8 TYP.
0.125 TYP.
10.0 TYP.
“HE” PACKAGE
1 2 3 4 5 6 7
5.2±0.2
UNIT: mm
R 0.5 TYP. 14 13 12 11 10 9 8
1.27 TYP.
0.4 TYP.
1.6 MAX 0.6±0.1 0±0.1 0.125 TYP.
3.8 TYP.
5.6±0.2 1.0 7.6 1.0
Edition 1.0
March 1999
4
4Gb/s GaAs Standard Logic IC
FMM362HG/HE, FMM363HG/HE
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC. Americas & R.O.W.
2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111
55 Schanck Road, Suite A-2 Freehold, NJ 07728-2964, U.S.A. Phone: (732) 303-0282 FAX: (732) 431-3393
www.fcsi.fujitsu.com
FUJITSU MIKROELECTRONIK GmbH
Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ, UK Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888
FUJITSU QUANTUM DEVICES, LTD. Asia & Japan
2-7-1, Nishi Shinjuku Shinjuku-ku, Tokyo 163-0721 Japan Phone: 3-5322-3356 FAX: 3-5322-3398
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures:
• Do not put this product into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallo.