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FMM363HG Dataheets PDF



Part Number FMM363HG
Manufacturers Fujitsu Media Devices
Logo Fujitsu Media Devices
Description 4Gb/s GaAs Standard Logic IC
Datasheet FMM363HG DatasheetFMM363HG Datasheet (PDF)

4Gb/s GaAs Standard Logic IC FEATURES • Ultra high speed operation up to 5 GHz from DC • Fast rise and fall time less than 80 ps • High input sensitivity: typ. 150mVp-p at 4 GHz (FMM362HG/HE) • High phase margin: typ. 200 deg. at 4 GHz (FMM362HG/HE) • Internal 50Ω input termination resistor for direct series connection • ECL compatible input and output • Single-5.2V power supply • Stable operation at wide temperature range between 0 and 85°C • Advanced packaging technology for ultra-fast applica.

  FMM363HG   FMM363HG


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4Gb/s GaAs Standard Logic IC FEATURES • Ultra high speed operation up to 5 GHz from DC • Fast rise and fall time less than 80 ps • High input sensitivity: typ. 150mVp-p at 4 GHz (FMM362HG/HE) • High phase margin: typ. 200 deg. at 4 GHz (FMM362HG/HE) • Internal 50Ω input termination resistor for direct series connection • ECL compatible input and output • Single-5.2V power supply • Stable operation at wide temperature range between 0 and 85°C • Advanced packaging technology for ultra-fast application FMM362HG/HE, FMM363HG/HE HG DESCRIPTION FMM362HG/HE and FMM363HG/HE are ultra high speed GaAs standard logic ICs designed for multi-gigabit optical communication systems and digital test instruments. HE • FMM362HG/HE: Master-slave D-type Flip Flop (D-F/F) : Typ. 5 GHz • FMM363HG/HE: 2-Input OR/NOR Gate (OR/NOR) : Typ. 5 Gbps These logic ICs are capable of minimizing output rise and fall time of less than 80 ps. FMM362HG/HE has a high input sensitivity of typ. 150mVp-p and phase margin of typ. 200 deg. at 4 GHz. FMM360 series is provided with internal 50Ω input termination resistor for direct series connection to eliminate the need of additional external biasing network. The GaAs die is attached into advanced 14-pin metal/ceramic flat package designed for ultra high speed application. Edition 1.0 March 1999 1 FMM362HG/HE, FMM363HG/HE ABSOLUTE MAXIMUM RATINGS (VDD = 0V) Rating Symbol Supply Voltage Input Termination Voltage Output Termination Voltage Input Voltage Reference Voltage Power Dissipation VSS VTI VTO VIN VREF PD Storage Temperature Tstg 4Gb/s GaAs Standard Logic IC Values -7.0 to 0 -3.0 to 0 -3.0to 0 -2.0 to 0 -2.0 to 0 1.0 -55 to +150 Unit V V V V V W °C ELECTRICAL CHARACTERISTICS (Tc = 25°C, VSS = -5.2V, VDD = 0V) FMM362HG/HE FMM363HG/HE Parameter Symbol (D-F/F) (OR/NOR) Min. Typ. Max. Min. Typ. Max. Maximum Clock Frequency (Note 1) 45 - 45- High Level Input Voltage VIH -1.0 -0.9 - -1.0 -0.9 - Low Level Input Voltage VIL - -1.7 -1.6 - -1.7 -1.6 High Level Output Voltage (Note 2) VOH -0.95 - - -0.95 - - Low Level Output Voltage (Note 2) VOL - - -1.65 - - -1.65 Output Rise Time (Note 3) tf - 60 80 - 60 80 Output Fall Time (Note 3) tf - 60 80 - 60 80 Power Supply Current Iss - 90 - - 90 - Note 1: FMM363HG/HE-Maximum Data Rate (Gbit/s) NRZ Note 2: 50W termination to -2V (VTO) Note 3: 20%~80% Unit Gbps V V V V ps ps mA Edition 1.0 March 1999 2 4Gb/s GaAs Standard Logic IC FMM362HG/HE, FMM363HG/HE RECOMMENDED OPERATING CONDITIONS (VDD = 0V) Parameter Symbol Min. Value Typ. Supply Voltage VSS -5.46 -5.2 Output Termination Voltage VTO -2.1 -2.0 Reference Voltage VREF -1.4 -1.3 Output Termination Resistor* RTO Operating Case Temperature Tc * Not required for direct series connection to FMM360 series STD logic. 0 50 - Max. -4.94 -1.9 -1.2 +65 TYPICAL CHARACTERISTICS Unit V V V Ω °C Rise/Fall Time (ps) 120 FMM363HG 100 80 tr 60 tf 40 20 00 50 100 Case Temperature (°C) 600 FMM362HG(Tc=25°C) 360 500 300 400 300 200 200 100 100 0 01 2 3 4 56 Data Rate (Gb/s) Phase Margin (deg) OUTPUT WAVEFORMS (Tc=25°C) FMM362HG 5.0Gb/s 17.4200 ns 18.4200 ns 19.4200 ns H: 100ps/div V: 500mV/div FMM363HG 5.0Gb/s 16.7020 ns 17.2020 ns 17.7020 ns H: 100ps/div V: 500mV/div Input Sensitivity (mVp-p) Edition 1.0 March 1999 3 FMM362HG/HE, FMM363HG/HE 4Gb/s GaAs Standard Logic IC 800mV DIN1 (1GHz) OUT tPHL= 175ps PULSE RESPONSE FMM362HG(Tc=25°C) tPHL=170ps OUT DIN2=Low 150 ps 800mV 800mV 1.6 MAX 0.6±0.1 “HG” PACKAGE UNIT: mm R 0.5 TYP. 0.40 10.0 TYP. 5.2±0.2 1.27 TYP. 1 14 2 13 3 12 4 11 5 10 69 78 2.0 TYP. 5.60±0.2 2.0 TYP. 3.8 TYP. 0.125 TYP. 10.0 TYP. “HE” PACKAGE 1 2 3 4 5 6 7 5.2±0.2 UNIT: mm R 0.5 TYP. 14 13 12 11 10 9 8 1.27 TYP. 0.4 TYP. 1.6 MAX 0.6±0.1 0±0.1 0.125 TYP. 3.8 TYP. 5.6±0.2 1.0 7.6 1.0 Edition 1.0 March 1999 4 4Gb/s GaAs Standard Logic IC FMM362HG/HE, FMM363HG/HE For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. Americas & R.O.W. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 55 Schanck Road, Suite A-2 Freehold, NJ 07728-2964, U.S.A. Phone: (732) 303-0282 FAX: (732) 431-3393 www.fcsi.fujitsu.com FUJITSU MIKROELECTRONIK GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ, UK Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 FUJITSU QUANTUM DEVICES, LTD. Asia & Japan 2-7-1, Nishi Shinjuku Shinjuku-ku, Tokyo 163-0721 Japan Phone: 3-5322-3356 FAX: 3-5322-3398 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put this product into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallo.


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