A893A

2SA893, 2SA893A Silicon PNP Epitaxial Application Low frequency high voltage amplifier Complementary pair with 2SC1890/A Outline TO-92 (1) 3 2 1 1. Emitter 2. Collector 3. Base 2SA893, 2SA893A Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SA893 –90 –90 –5 –50 300 150 –55 to +150 2SA893A –120 –120 –5 –50 300 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Collector to emitter breakdown voltage V(BR)CEO Collector cutoff current ICBO DC current transfer ratio hFE*1 2SA893 Min Typ –90 — —— —— 250 — Max — –0.5 — 800 2SA893A Min Typ –120 — —— —— 250 — Base to emitter voltage VBE — — –0.75 — — Collector to emitter saturation voltage VCE(sat) —— –0.5 — — Gain bandwidth product fT — 120 — — 120 Collector output capacitance Noise figure Cob — 1.8 — — 1.8 NF — 2 10 — 2 Note: 1. The 2SA893/A is grouped by hFE as follows. DE 250 to 500 400 to 800 Max Unit Test conditions —V IC = –1 mA, RBE = ∞ — µA –0.5 µA 800 –0.75 V –0.5 V — MHz — pF VCB = –75 V, IE = 0 VCB = –100 V, IE = 0 VCE = –12 V, IC = –2 mA VCE = –12 V, IC = –2 mA IC = –10 mA, IB = –1 mA VCE = –12 V, IC = –2 mA VCB = –25 V, IE = 0, f = 1 MHz 10 dB VCE = –6 V, IC = –50 µA Rg = 50 kΩ, f = 1 kHz See characteristic curves of 2SA872 and 2SA872A 2 Collect...