KDS160

SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Small Package : USC. Low Forward Voltage. Fast Reverse Recovery Time. Small Total capacitance. Suffix U : Qualified to AEC-Q101. ex) KDS160-RTK/HU MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10mS) Power Dissipation VRM VR IFM IO IFSM PD * 85 80 300 100 2 200 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 * : Mounted on a glass epoxy circuit board of 20 20mm, pad dimension of 4 4mm. UNIT V V mA mA A mW KDS160 SILICON EPITAXIAL PLANAR DIODE CATHODE MARK E A K F L B 1 2 D MM 1. ANODE 2. CATHODE G H J C I DIM MILLIMETERS A 2.50+_ 0.2 B 1.25+_ 0.05 C 0.90+_ 0.05 D 0.30 +_ 0.06 E 1.70 +_ 0.05 F 0.27 +_ 0.10 G 0.126+_ 0.03 H 0~0.1 I 1.0 MAX J 0.15+_ 0.05 K 0.4 L 2 +4/-2 M 4~6 USC Marking Type Name UF Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time VF(1) VF(2) VF(3) IR CT trr IF=1mA IF=10mA IF=100mA VR=80V VR=0V, f=1MHz IF=10mA MIN. - TYP. 0.60 0.72 0.90 0.9 1.6 MAX. - 1.20 0.5 3.0 4.0 UNIT V A pF nS 2018. 04. 10 Revision No : 9 1/3 FORWARD CURRENT I F (mA) KDS160 10 3 10 2 10 1 10 -1 10 -2 0 IF - VF C C TaTa=-=2255 Ta=100 C 0.2 0.4 0.6 0.8 1.0 FORWARD VOLTAGE VF (V) 1.2 REVERSE CURRENT IR (μA) I R - VR 10 1 Ta=10...