Document
FNA25060 600 V Motion SPM® 2 Series
April 2015
FNA25060
600 V Motion SPM® 2 Series
Features
• UL Certified No. E209204 (UL1557)
• 600 V - 50 A 3-Phase IGBT Inverter, Including Control ICs for Gate Drive and Protections
• Low-Loss, Short-Circuit-Rated IGBTs
• Very Low Thermal Resistance Using Al2O3 DBC Substrate
• Built-In Bootstrap Diodes and Dedicated Vs Pins Simplify PCB Layout
• Separate Open-Emitter Pins from Low-Side IGBTs for Three-Phase Current Sensing
• Single-Grounded Power Supply Supported
• Built-In NTC Thermistor for Temperature Monitoring and Management
• Adjustable Over-Current Protection via Integrated Sense-IGBTs
• Isolation Rating of 2500 Vrms / 1 min.
General Description
The FNA25060 is a Motion SPM® 2 module providing a fully-featured, high-performance inverter output stage for AC induction, BLDC, and PMSM motors. These modules integrate optimized gate drive of the built-in IGBTs to minimize EMI and losses, while also providing multiple on-module protection features: under-voltage lockouts, over-current shutdown, temperature sensing, and fault reporting. The built-in, high-speed HVIC requires only a single supply voltage and translates the incoming logiclevel gate inputs to high-voltage, high-current drive signals to properly drive the module's internal IGBTs. Separate negative IGBT terminals are available for each phase to support the widest variety of control algorithms.
Applications
• Motion Control - Industrial Motor (AC 200 V Class)
Related Resources
• AN-9121 - Users Guide for 600V SPM® 2 Series
• AN-9076 - Mounting Guide for New SPM® 2 Package
• AN-9079 - Thermal Performance of Motion SPM® 2 Series by Mounting Torque
Figure 1. Package Overview
Package Marking and Ordering Information
Device FNA25060
Device Marking FNA25060
Package SPMCA-A34
Packing Type Rail
Quantity 6
©2015 Fairchild Semiconductor Corporation FNA25060 Rev. 1.0
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FNA25060 600 V Motion SPM® 2 Series
Intergrated Power Functions
• 600 V - 50 A IGBT inverter for three-phase DC / AC power conversion (refer to Figure 3)
Intergrated Drive, Protection, and System Control Functions
• For inverter high-side IGBTs: gate-drive circuit, high-voltage isolated high-speed level-shifting control circuit, Under-Voltage Lock-Out Protection (UVLO), Available bootstrap circuit example is given in Figures 5 and 15.
• For inverter low-side IGBTs: gate-drive circuit, Short-Circuit Protection (SCP) control circuit, Under-Voltage Lock-Out Protection (UVLO)
• Fault signaling: corresponding to UV (low-side supply) and SC faults
• Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt-trigger input
Pin Configuration
(1) P
(2) W
(3) V Case Temperature (TC) Detecting Point
(4) U
(5) NW (6) NV (7) NU (8) RTH (9) VTH
(34) VS(W) (33) VB(W) (32) VBD(W) (31) VCC(WH) (30) IN(WH) (29) VS(V) (28) VB(V) (27) VBD(V) (26) VCC(VH) (25) IN(VH) (24) VS(U) (23) VB(U) (22) VBD(U) (21) VCC(UH) (20) COM(H) (19) IN(UH)
(18) RSC (17) CSC
(16) CFOD (15) VFO (14) IN(WL) (13) IN(VL) (12) IN(UL) (11) COM(L) (10) VCC(L)
Figure 2. Top View
©2015 Fairchild Semiconductor Corporation FNA25060 Rev. 1.0
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FNA25060 600 V Motion SPM® 2 Series
Pin Descriptions
Pin Number
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34
Pin Name
P
W
V
U
NW NV NU RTH VTH VCC(L) COM(L) IN(UL) IN(VL) IN(WL) VFO CFOD CSC RSC IN(UH) COM(H) VCC(UH) VBD(U) VB(U) VS(U) IN(VH) VCC(VH) VBD(V) VB(V) VS(V) IN(WH) VCC(WH) VBD(W) VB(W) VS(W)
Pin Description
Positive DC-Link Input Output for W Phase Output for V Phase Output for U Phase Negative DC-Link Input for W Phase Negative DC-Link Input for V Phase Negative DC-Link Input for U Phase Series Resistor for Thermistor (Temperature Detection) Thermistor Bias Voltage Low-Side Bias Voltage for IC and IGBTs Driving Low-Side Common Supply Ground Signal Input for Low-Side U Phase Signal Input for Low-Side V Phase Signal Input for Low-Side W Phase Fault Output Capacitor for Fault Output Duration Selection Capacitor (Low-Pass Filter) for Short-Circuit Current Detection Input Resistor for Short-Circuit Current Detection Signal Input for High-Side U Phase High-Side Common Supply Ground High-Side Bias Voltage for U Phase IC Anode of Bootstrap Diode for U Phase High-Side Bootstrap Circuit High-Side Bias Voltage for U Phase IGBT Driving High-Side Bias Voltage Ground for U Phase IGBT Driving Signal Input for High-Side V Phase High-Side Bias Voltage for V Phase IC Anode of Bootstrap Diode for V Phase High-Side Bootstrap Circuit High-Side Bias Voltage for V Phase IGBT Driving High-Side Bias Voltage Ground for V Phase IGBT Driving Signal Input for High-Side W Phase High-Side Bias Voltage for W Phase IC Anode of Bootstrap Diode for W Phase High-Side Bootstrap Circuit High-Side Bias Voltage for W Phase IGBT Driving High-Side Bias Voltage Ground for W Phase IGBT Driving
©2015 Fairchild Semiconductor Corporation FNA25060 Rev. 1.0
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