2SC4379U

ST 2SC4379U NPN Silicon Epitaxial Planar Transistor for power amplification applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Total Power Dissipation Junction Temperature Storage Temperature Range 1) When mounted on a 250 mm2 X 0.8 t ceramic substrate. Symbol VCBO VCEO VEBO IC IB Ptot Tj Tstg Value 50 50 5 2 0.4 0.5 1 1) 150 - 55 to + 150 Unit V V V A A W OC OC Characteristics at Ta = 25 OC Parameter Symbol DC Current Gain at VCE = 2 V, IC =0.5 A at VCE = 2 V, IC = 1.5 A Current Gain Group O Y hFE hFE hFE Collector Base Cutoff Current at VCB = 50 V Emitter Base Cutoff Current at VEB = 5 V Collector Emitter Breakdown Voltage at IC = 10 mA Collector Emitter Saturation Voltage at IC = 1 A, IB = 50 mA Base Emitter Saturation Voltage at IC = 1 A, IB = 50 mA Transition Frequency at VCE = 2 V, IC = 500 mA Collector Output Capacitance at VCB = 10 V, f = 1 MHz ICBO IEBO V(BR)CEO VCE(sat) VBE(sat) fT Cob Min. 70 120 40 - - 50 - - - - Typ. - - - - - 120 30 Max. 140 240 100 100 - 0.5 1.2 - - Unit nA nA V V V MHz pF SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated：23/03/2012 Rev：02 ST 2SC4379U SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated：23/03/2012 Rev：02 ST 2SC4379U SOT-89 PACKAGE OUTLINE SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated：23/03/20...