FDPF10N60ZUT

FDPF10N60ZUT — N-Channel UniFETTM Ultra FRFETTM MOSFET FDPF10N60ZUT N-Channel UniFETTM Ultra FRFETTM MOSFET 600 V, 9 A, 800 mΩ December 2013 Features RDS(on) = 650 mΩ (Typ.) @ VGS = 10 V, ID = 4.5 A Low Gate Charge (Typ. 31 nC) Low Crss (Typ. 15 pF) 100% Avalanche Tested Improved dv/dt Capability RoHS Compliant Applications LCD/LED/PDP TV Lighting Uninterruptible Power Supply Description UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. UniFET II Ultra FRFETTM MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET II Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D GDS TO-220F G MOSFET Maximum Ratings TC = 25oC unless otherw...