2SD2271

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 500(Min)@ (VCE= 2V, IC= 5A) ·High Breakdown Voltage :VCEO(sus)=200V（Min） ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor drive applications ·High current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 12 A ICP Collector Current-Peak 18 A IB Base Current Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1 A 2.0 W 30 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD2271 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD2271 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; L=40mH V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 0.1A VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 0.1A ICBO Collector Cutoff Current VCB= 300V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE 1 DC Current Gain IC= 5A; VCE= 2V hFE 2 DC Current Gain IC= 10A; VCE= 2V fT Transition Frequency IC= 1A; VCE= 2V Cob Collector Output Capacitance VCB=10V,...