FDD4685_F085

FDD4685_F085 P-Channel PowerTrench® MOSFET FDD4685_F085 P-Channel PowerTrench® MOSFET -40V, -32A, 35mΩ Features „ Typ rDS(on) = 23mΩ at VGS = -10V, ID = -8.4A „ Typ rDS(on) = 30mΩ at VGS = -4.5V, ID = -7A „ Typ Qg(TOT) = 19nC at VGS = -5V „ High performance trench technology for extremely low rDS(on) „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Inverter „ Power Supplies December 2010 ©2010 Fairchild Semiconductor Corporation FDD4685_F085 Rev. C 1 www.fairchildsemi.com FDD4685_F085 P-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC<90oC, VGS = 10V) Pulsed EAS Single Pulse Avalanche Energe PD Power Dissipation Dreate above 25oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics (Note 1) Ratings -40 ±20 -32 See Figure 4 121 83 0.56 -55 to +175 Units V V A mJ W W/oC oC RθJC Maximum Thermal Resistance Junction to Case 1.8 oC/W RθJA Maximum Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 40 oC/W Package Marking and Ordering Information Device Marking Device FDD4685 FDD4685_F085 Package TO252 Reel Size 13” Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Off Characteristics Test Conditions Tape Width 12mm Quantity 2500 units Min Typ Max Units BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Tempera...