P-Channel 2.5V Specified MOSFET
FDS9431A_F085 P-Channel 2.5V Specified MOSFET
FDS9431A_F085
P-Channel 2.5V Specified MOSFET
General Description
This P-...
Description
FDS9431A_F085 P-Channel 2.5V Specified MOSFET
FDS9431A_F085
P-Channel 2.5V Specified MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
Applications
DC/DC converter Power management Load switch Battery protection
February 2010
tm
Features -3.5 A, -20 V. RDS(ON) = 0.130 Ω @ VGS = -4.5 V
RDS(ON) = 0.180 Ω @ VGS = -2.5 V.
Fast switching speed. High density cell design for extremely low RDS(ON). High power and current handling capability. Qualified to AEC Q101 RoHS Compliant
D D D D
5 6
SO-8
G SS S
7 8
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS VGSS ID
PD
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous
- Pulsed Power Dissipation for Single Operation
(Note 1a)
(Note 1a) (Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
RqJA
Thermal Resistance, Junction-to-Ambient
RqJC
Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS9431A
FDS9431A_F085
13’’
©2010 Fairchild Semiconductor Corporation FDS9431A_F085 Rev. A
1
4 3 2 1
Ratings
-20 ±8 -3.5 -18 2.5 1.2 1.0 -55 to +150
50 25
Units
V V A
W
°C
°C/W °C/W
Tape width 12mm
Quant...
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