Power MOSFET
Power MOSFET
IRFI510G, SiHFI510G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
100
RDS(on) (Ω)
VGS = 10 V
Qg (Max.) (n...
Description
Power MOSFET
IRFI510G, SiHFI510G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
100
RDS(on) (Ω)
VGS = 10 V
Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
8.3 2.3 3.8 Single
0.54
TO-220 FULLPAK
D
GDS
G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
FEATURES
Isolated Package
High Voltage Isolation = 2.5 kVRMS (t = 60 s;
Available
f = 60 Hz)
RoHS*
Sink to Lead Creepage Distance = 4.8 mm
COMPLIANT
175 °C Operating Temperature
Dynamic dV/dt Rating
Low Thermal Resistance
Lead (Pb)-free Available
DESCRIPTION
Third Generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
TO-220 FULLPAK IRFI510GPbF
SiHFI510G-E3 IRFI510G SiHFI510G
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor
VGS at 10 V
TC = 25 °C TC = 100 °C
VGS ID IDM
Single Pulse Avalanche Energyb Repetitive Avalanche C...
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