FQA7N65C 650V N-Channel MOSFET
FQA7N65C
650V N-Channel MOSFET
Features
• 7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V • Low gat...
FQA7N65C 650V N-Channel MOSFET
FQA7N65C
650V N-Channel MOSFET
Features
7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability
February 2006
QFET ®
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
D
G DS
TO-3P
FQA Series
G
Absolute Maximum Ratings
Symbol
VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C) - Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
Thermal Characteristics
Symbol
RθJC RθJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
S
FQA7N...