2SD1230

isc Silicon NPN Darlington Power Transistor 2SD1230 DESCRIPTION ·High DC Current Gain : hFE= 1500(Min.)@ IC= 4A, VCE= 3V ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.) ·Complement to Type 2SB913 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 12 A 2.5 W 60 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A, IB= 8mA VBE(sat) Base-Emitter Saturation Voltage IC= 4A, IB= 8mA ICBO Collector Cutoff current VCB= 80V, IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 fT Current-Gain—Bandwidth Product IC= 4A; VCE= 5V hFE DC Current Gain IC= 4A; VCE= 3V Switching Times ton Turn-O...