2SD1236

Ordering number : ENN1027A 2SB920 / 2SD1236 PNP / NPN Epitaxial Planar Silicon Transistors 2SB920 / 2SD1236 Large Current Switching Applications Applications Large current switching of relay drivers, high-speed inverters, converters. Package Dimensions unit : mm 2010C Features Low collector-to-emitter saturation voltage : VCE(sat)=--0.5V (PNP), 0.4V (NPN) max. Large current capacity. [2SB920 / 2SD1236] 10.2 3.6 5.1 4.5 1.3 2.7 15.1 6.3 18.0 5.6 1.2 2.7 14.0 0.8 Specifications ( ) : 2SB920 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta=25°C Tc=25°C 123 2.55 2.55 Conditions Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions VCB=(--)80V, IE=0 VEB=(--)4V, IC=0 min 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220 Ratings (--)120 (--)80 (--)6 (--)5 (--)9 1.75 30 150 --55 to +150 Unit V V V A A W W °C °C Ratings typ max Unit (--)0.1 mA (--)0.1 mA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected...