D1221

TOSHIBA Transistor Silicon NPN Diffused Type (PCT Process) 2SD1221 2SD1221 Audio Frequency Power Amplifier Application Unit: mm Low collector saturation voltage : VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A) High power dissipation: PC = 20 W (Tc = 25°C) Complementary to 2SB906 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 7 V Collector current IC 3 A Base current IB 0.5 A Collector power dissipation Ta = 25°C Tc = 25°C PC 1.0 W 20 Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA TOSHIBA ― ― 2-7J1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 0.36 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2010-05-19 Electrical Characteristics (Ta = 25°C) 2SD1221 Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC ...