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D1221

Part Number	D1221
Manufacturer	Toshiba
Description	2SD1221
Published	Jun 13, 2015
Detailed Description	TOSHIBA Transistor Silicon NPN Diffused Type (PCT Process) 2SD1221 2SD1221 Audio Frequency Power Amplifier Application...
Datasheet	D1221 PDF File

Overview

TOSHIBA Transistor Silicon NPN Diffused Type (PCT Process) 2SD1221 2SD1221 Audio Frequency Power Amplifier Application Unit: mm • Low collector saturation voltage : VCE (sat) = 0.
4 V (typ.
) (IC = 3 A, IB = 0.
3 A) • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 7 V Collector current IC 3 A Base current IB 0.
5 A Collector power dissipation Ta = 25°C Tc = 25°C PC 1.
0 W 20 Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA TOSHIBA ― ― 2-7J1...

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