2SD1221

SMD Type Transistors NPN Transistors 2SD1221 ■ Features ● Low collector saturation voltage : VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A) ● High power dissipation: PC = 20 W (Tc = 25°C) ● Complementary to 2SB906 +9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 +1.50 0.15 -0.15 0.80+0.1 -0.1 0.127 m ax + 0.155 .5 5 -0.15 3.80 Unit: mm +02.65 .25 -0.1 +00.50 .15 -0.15 +01.50 .28 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Ta = 25℃ Tc = 25℃ ■ Electrical Characteristics Ta = 25℃ Symbol VCBO VCEO VEBO IC IB PC TJ Tstg 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 Rating 60 60 7 3 0.5 1 20 150 -55 to 150 Unit V A W ℃ 1 Base 2 Collector 3 Emitter Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage Base - emitte voltage DC current gain Turn-on time Storage time Fall time Collector output capacitance Transition frequency Symbol Test Conditions VCBO Ic= 100 μA， IE= 0 VCEO Ic= 50 mA， IB= 0 VEBO IE= 100μA， IC= 0 ICBO VCB= 60 V , IE= 0 IEBO VEB= 7V , IC=0 VCE(sat) IC=3 A, IB=300mA VBE(sat) IC=3 A, IB=300mA VBE VCE= 5V, IC= 500mA hFE(1) VCE= 5V...