Ordering number:1046B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB919/2SD1235
30V/8A High-Speed Switching Applicati...
Ordering number:1046B
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SB919/2SD1235
30V/8A High-Speed Switching Applications
Applications
· Large current switching of relay drivers, high-speed inverters, converters.
Features
· Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V (
PNP), 0.4V (
NPN) max. · Large current capacity.
Package Dimensions
unit:mm 2010C
[2SB919/2SD1235]
( ) : 2SB919
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Gain-Bandwidth Product
ICBO IEBO hFE1 hFE2
fT
VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A VCE=(–)2V, IC=(–)4A VCE=(–)5V, IC=(–)1A
* : The 2SB919/2SD1235 are classified as follows according to hFE at 1A.
70 Q 140 100 R 200 140 S 280
JEDEC : TO-220AB EIAJ : SC-46
1 : Base 2 : Collector 3 : Emitter
Ratings (–)60 (–)30 (–)6 (–)8 (–)15 1.75 30 150
–55 to +150
Unit V V V A A W W ˚C ˚C
Ratings min typ
70* 30
120
max (–)0.1 (–)0.1 280*
Unit mA mA
MHz
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-s...