TGF2025

Applications Defense & Aerospace High-Reliability Test and Measurement Commercial Broadband Wireless TGF2025 250 um Discrete GaAs pHEMT Product Features Frequency Range: DC - 20 GHz 24 dBm Typical Output Power - P1dB 14 dB Typical Gain at 12 GHz 58% Typical PAE at 12 GHz 0.9 dB Typical NF at12 GHz No Vias Technology: 0.25 um GaAs pHEMT Chip Dimensions: 0.41 x 0.34 x 0.10 mm Functional Block Diagram Drain Gate Source General Description The TriQuint TGF2025 is a discrete 250 micron pHEMT which operates from DC to 20 GHz. The TGF2025 is fabricated using TriQuint’s proven standard 0.25 um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2025 typically provides 24 dBm of output power at P1dB with gain of 14 dB and 58% power-added efficiency at 1 dB compression. This performance makes the TGF2025 appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection. The TGF2025 is lead-free and RoHS compliant. Pad Configuration Pad Dimensions G (71um X 71um) D (71um X 71um) S (121um X 71um) Terminals Gate Drain Source Ordering Information Part TGF2025 ECCN EAR99 Description 250 um GaAs pHEMT Datasheet: Rev. D 11-04-13 © 2013 TriQuint - 1 of 8 - Disclaimer: Subject to change without notice www.triquint.com TGF2025 250 um Discrete GaAs...