TGF2018

Applications  Defense & Aerospace  High-Reliability  Test and Measurement  Commercial  Broadband Wireless TGF2018 180 um Discrete GaAs pHEMT Product Features  Frequency Range: DC - 20 GHz  22 dBm Typical Output Power - P1dB  14 dB Typical Gain at 12 GHz  55% Typical PAE at 12 GHz  1 dB Typical NF at 12 GHz  No Vias  Technology: 0.25 um GaAs pHEMT  Chip Dimensions: 0.41 x 0.34 x 0.10 mm Functional Block Diagram General Description The TriQuint TGF2018 is a discrete 180 micron pHEMT which operates from DC to 20 GHz. The TGF2018 is fabricated using TriQuint’s proven standard 0.25 um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2018 typically provides 22 dBm of output power at P1dB with gain of 14 dB and 55% power-added efficiency at 1 dB compression. This performance makes the TGF2018 appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection. The TGF2018 is lead-free and RoHS compliant. Pad Configuration Pad Dimensions G (71um X 71um) D (71um X 71um) S (121um X 71um) Terminals Gate Drain Source Ordering Information Part TGF2018 ECCN EAR99 Description 180 um GaAs pHEMT Datasheet: Rev. D 11-04-13 © 2013 TriQuint - 1 of 8 - Disclaimer: Subject to change without notice www.triquint.com TGF2018 180 um Discrete GaAs pHEMT Absolute Ma...